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Infineon OptiMOS™ N-Channel MOSFET, 479 A Maximum Continuous Drain Current, 25 V Maximum Drain Source BSC004NE2LS5ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 5.49mm |
| Model | BSC004NE2LS5ATMA1 |
| Width | 6.35mm |
| Mount Type | Surface |
| Series | OptiMOS™ |
| Maximum Operating Temperature | 175°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 479A |
| Maximum Drain Source Voltage Vds | 25V |
| Maximum Drain Source Resistance Rds | 0.45mΩ |
| Maximum Power Dissipation Pd | 188W |
| Typical Gate Charge Qg @ Vgs | 135nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Supports up to 479 A continuous drain current for heavy load handling.
- Low on-resistance of 0.45 mΩ for reduced conduction losses and improved efficiency.
- Max drain-source voltage of 25 V suitable for low-voltage power stages.
- 188 W power dissipation for high thermal load capability.
- 135 nC gate charge enables controlled switching design.
- Wide temperature tolerance from -55°C to 175°C supports diverse environments.
- Reliable surface mount TDSON 8-pin package.
- Max gate-source voltage of 20 V allows robust gate drive margin.
Product Description
The Infineon OptiMOS™ BSC004NE2LS5ATMA1 is a high-performance N-Channel MOSFET designed for demanding power switching applications requiring substantial current capacity and thermal robustness. This device supports a maximum continuous drain current of 479 A and a maximum drain-source voltage of 25 V while housed in a compact 8-pin TDSON package suitable for surface mounting.
Its very low on-resistance of 0.45 mΩ reduces conduction losses significantly, enhancing energy efficiency in power stages. With a maximum power dissipation rating of 188 W, it ensures durability under elevated thermal loads typically encountered in industrial, telecommunications, and automotive power electronics applications.
The typical gate charge of 135 nC allows designers to optimize switching performance while the device's wide operating temperature range from -55°C to 175°C supports use in harsh or variable environmental conditions. Additionally, the robust maximum gate-source voltage of 20 V provides good gate drive margin for stable operation.
Typical applications include high-current DC power distribution modules, synchronous rectification in low-voltage converters, motor inverter stages requiring high peak currents, and battery management for high-power cells. The MOSFET is particularly suited for low-side switching and synchronous rectifier configurations considering its N-channel topology.
The surface-mount TDSON package facilitates easy integration on compact printed circuit boards. Ideal for industrial, telecommunications, and automotive use, this component supports reliable, efficient power switching in modern electronics systems.
Supports up to 479 A continuous drain current for heavy load handling. Low on-resistance of 0.45 mΩ for reduced conduction losses and improved efficiency. Max drain-source voltage of 25 V suitable for low-voltage power stages.
188 W power dissipation for high thermal load capability. 135 nC gate charge enables controlled switching design. Wide temperature tolerance from -55°C to 175°C supports diverse environments. Reliable surface mount TDSON 8-pin package.
Max gate-source voltage of 20 V allows robust gate drive margin. Used in synchronous rectification, motor inverters, battery management, and telecom power stages. Explore more high-performance discrete semiconductor solutions and reliable MOSFETs in our comprehensive Electronics & Electricals catalog at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current of this model is 479 A, allowing it to handle heavy loads effectively.
This MOSFET supports a maximum drain-source voltage of 25 V, making it suitable for low-voltage power stages.
The on-resistance is 0.45 mΩ, which helps to reduce conduction losses and improve efficiency.
It has a maximum power dissipation rating of 188 W, allowing it to operate under high thermal loads.
The typical gate charge is 135 nC, which enables controlled switching design for optimized performance.
This model operates within a wide temperature range from -55°C to 175°C, supporting diverse environmental conditions.
It comes in a TDSON package type, which is suitable for surface mounting on compact printed circuit boards.
This device has 8 pins, which facilitates its integration into various electronic circuits.
The maximum gate-source voltage is 20 V, providing a robust gate drive margin for stable operation.
It is suitable for applications such as synchronous rectification, motor inverters, and battery management in high-power cells.
The forward voltage is 1 V, which is a relevant specification for its performance in circuits.
The country of origin for this model is India.
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