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Toshiba Type P-Channel MOSFET, 6 A, 12 V, 3-Pin SOT-23 SSM3J338R,LF(T
Specifications
| Country of Origin | India |
|---|---|
| Brand | Toshiba |
| Height | 0.8mm |
| Length | 2.4mm |
| Model | SSM3J338R,LF(T |
| Width | 2.9mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 6A |
| Maximum Drain Source Voltage Vds | 12V |
| Maximum Drain Source Resistance Rds | 26.3mΩ |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 19.5nC |
| Maximum Gate Source Voltage Vgs | 10V |
| Forward Voltage Vf | 0.75V |
Key Features
- The device features a 3-pin SOT-23 package suitable for surface mounting.
- Maximum power dissipation rating is 2 W for efficient thermal management.
- Low maximum drain-source resistance of 26.3 mΩ supports high efficiency.
- Operates within a temperature range from -55°C to 150°C for wide application tolerance.
- Typical forward voltage is 0.75 V with a typical gate charge of 19.5 nC at gate-to-source voltage.
- Maximum gate-source voltage rating is 10 V ensuring device safety during switching.
- Compact dimensions of 2.4 mm length, 2.9 mm width, and 0.8 mm height enable dense PCB layouts.
- This MOSFET is mainly designed for power management and switching in electronic circuits.
Product Description
Toshiba SSM3J338R,LF(T Type P-Channel MOSFET is a high-performance silicon field-effect transistor designed for power management switching applications. It features a compact 3-pin SOT-23 package ideal for surface mounting on PCBs.
This MOSFET supports a maximum continuous drain current of 6 A and a maximum drain-source voltage of 12 V, making it suitable for low voltage power electronics. Its low drain-source resistance of 26.3 mΩ contributes to efficient conduction and minimized power loss.
The device can operate safely over a wide temperature range from -55°C to 150°C, making it suitable for various industrial and commercial applications where high reliability is critical. The typical forward voltage of 0.75 V ensures suitable gate drive conditions, with a typical gate charge of 19.5 nC facilitating fast switching speeds.
Dimensionally, the MOSFET measures 2.4 mm in length, 2.9 mm in width, and 0.8 mm in height, allowing integration into compact electronic designs. It has a maximum power dissipation of 2 W, providing adequate thermal tolerance in typical applications.
The device is RoHS compliant and designed without automotive certification. It is widely used in industrial electronics, consumer electronics, telecommunications, and other fields requiring efficient power switching and management.
The device features a 3-pin SOT-23 surface mount package for easy PCB assembly. Maximum continuous drain current of 6 A supports moderate power handling. Low drain-source resistance ensures energy efficiency during conduction.
Wide operating temperature range allows deployment in harsh environments. Typical gate charge supports rapid switching performance. Robust maximum gate-source voltage protects against accidental overvoltage. Compact device dimensions enable space-saving circuit designs.
Primarily used in power management and switching applications.
This MOSFET is a reliable choice for electronic circuit designers seeking a low voltage, moderate current P-channel transistor with high efficiency and compact dimensions. Discover our extensive range of semiconductors at EnvMart for your industrial, laboratory, and manufacturing needs.
Explore more products in our Discrete Semiconductor category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 6 A.
The maximum drain-source voltage for this device is 12 V.
This MOSFET comes in a 3-pin SOT-23 surface mount package.
The maximum power dissipation rating for this model is 2 W.
It operates within a temperature range from -55°C to 150°C.
The dimensions of this model are 2.4 mm in length, 2.9 mm in width, and 0.8 mm in height.
The typical forward voltage for this MOSFET is 0.75 V.
The maximum gate-source voltage rating for this device is 10 V.
The typical gate charge at gate-to-source voltage is 19.5 nC.
The maximum drain-source resistance for this model is 26.3 mΩ.
This MOSFET is mainly designed for power management and switching applications in electronic circuits.
The country of origin for this MOSFET is India.
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