Nexperia P-Channel Trench MOSFET 3-Pin SOT-23 20 V, 3.5 A, Enhancement Mode PMV48XP

Nexperia PMV48XP P-Channel Trench MOSFET is a high-performance semiconductor device designed for applications requiring efficient power switching and control. With a maximum continuous drain current of 3.5 A and a maximum drain-source voltage of 20 V, this transistor operates in enhancement mode, delivering reliable switching performance in surface mount technology (SMT) circuits.

The device features a low on-resistance of 81 milliohms, which reduces conduction losses and improves energy efficiency. Its maximum gate-source voltage range from -12 V to +12 V allows for precise and stable gate control, making it suitable for a wide range of electronic applications including power management, load switching, and signal amplification.

Built in a compact 3-pin SOT-23 package, the MOSFET occupies minimal PCB space, ideal for densely populated or portable electronic devices. It withstands operating temperatures ranging from -55°C to 150°C, assuring durability even in harsh industrial or automotive environments, although it is not specified as meeting automotive standards.

With a maximum power dissipation of 930 milliwatts and an average gate charge of 8.5 nanocoulombs, it ensures optimized switching speed and thermal management, enhancing device longevity and performance consistency.

This component is compliant with IEC 60134 standards, reflecting international quality and safety certifications. The device is manufactured in China and ideal for semiconductor discrete assemblies requiring reliable and efficient MOSFET behavior.

This MOSFET features a 3-pin SOT-23 surface mount package for compact PCB integration. It operates with a maximum continuous drain current of 3.5 A and drain-source voltage of 20 V. The device supports enhancement mode operation with a low on-state resistance of 81 mΩ.

Operating temperature range from -55°C to 150°C makes it suitable for high-temperature applications. Gate-source voltage rating up to ±12 V provides robust control and switching stability. Maximum power dissipation of 930 mW supports sustained performance under load.

Typical gate charge of 8.5 nC facilitates efficient switching action. Dimensions: Length 3 mm, Width 1.4 mm, Height 1 mm for compactness.

Designed for discrete semiconductor applications in electronics and electrical engineering sectors, this Nexperia PMV48XP MOSFET is essential for power management circuits, discrete switching, and signal processing devices in industrial, consumer electronics, and communication equipment.

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