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STMicroelectronics STripFET N-Channel MOSFET, 24 A, 60 V Enhancement, 3-Pin TO-252 STD20NF06T4
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.4mm |
| Length | 6.6mm |
| Model | STD20NF06T4 |
| Width | 6.2mm |
| Mount Type | Surface |
| Series | STripFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 24A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 40mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 60W |
| Typical Gate Charge Qg @ Vgs | 23nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.5V |
Key Features
- Supports high current of up to 24 A for efficient power handling.
- Operates with a maximum drain-source voltage of 60 V.
- Compact TO-252 package with 3 pins supports surface mounting.
- Enhancement mode channel type ensures reliable switching performance.
- Maximum power dissipation rating of 60 W enables effective thermal management.
- Operates within a temperature range from -55°C to 175°C.
- Low maximum drain-source resistance of 40 milliohms for reduced conduction losses.
- Typical gate charge of 23 nC allows fast switching speeds.
Product Description
STMicroelectronics STD20NF06T4 is an N-Channel STripFET™ MOSFET designed for high efficiency in power switching and amplification applications. It features a compact TO-252 3-pin surface-mount package supporting a maximum continuous drain current of 24 A and a drain-source voltage rating of 60 V. This enhancement-mode MOSFET is suitable for applications in power management circuits, motor controls, and industrial electronics.
The device provides a low on-resistance of 40 mΩ, ensuring minimal conduction losses and improved energy efficiency. It dissipates up to 60 W of power safely, making it fit for demanding thermal environments. Operating temperatures range from -55°C to 175°C, offering reliability in harsh industrial conditions.
The typical gate charge of 23 nC allows rapid switching, improving performance in high-frequency circuits. It tolerates gate-source voltages from -20 V to +20 V, protecting against voltage spikes and ensuring durability. The forward voltage of 1.5 V optimizes conduction efficiency.
This MOSFET is ideal for use in industrial power supplies, power converters, and switching regulators. Its robust design ensures longevity and consistent performance in applications such as manufacturing automation, motor drives, and HVAC controls.
Supports high current of up to 24 A for efficient power handling. Operates with a maximum drain-source voltage of 60 V. Compact TO-252 package with 3 pins supports surface mounting. Enhancement mode channel type ensures reliable switching performance.
Maximum power dissipation rating of 60 W enables effective thermal management. Operates within a temperature range from -55°C to 175°C. Low maximum drain-source resistance of 40 milliohms for reduced conduction losses. Typical gate charge of 23 nC allows fast switching speeds.
Withstands gate-source voltages between -20 V and +20 V for robust control. Forward voltage drop of 1.5 V supports efficient conduction.
Choose STMicroelectronics MOSFET products for reliable power management solutions in industrial, commercial, and electronics applications. Explore more products in the MOSFET category at EnvMart for your advanced semiconductor needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 24 A.
It operates with a maximum drain-source voltage of 60 V.
The maximum power dissipation rating is 60 W, allowing for effective thermal management.
This unit operates within a temperature range from -55°C to 175°C.
It comes in a compact TO-252 package with 3 pins, suitable for surface mounting.
The typical gate charge is 23 nC, which allows for fast switching speeds.
The maximum drain-source resistance is 40 milliohms, which helps reduce conduction losses.
It is suitable for applications in power management circuits, motor controls, and industrial electronics.
The forward voltage drop is 1.5 V, optimizing conduction efficiency.
This model features an N-channel type, which is designed for enhancement mode operation.
It can tolerate gate-source voltages from -20 V to +20 V, providing protection against voltage spikes.
The dimensions of the TO-252 package are 6.6 mm in length, 6.2 mm in width, and 2.4 mm in height.
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