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STMicroelectronics STripFET N-Channel MOSFET, 17 A, 30 V Enhancement, 3-Pin TO-252 STD17NF03LT4
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.4mm |
| Length | 6.6mm |
| Model | STD17NF03LT4 |
| Width | 6.2mm |
| Mount Type | Surface |
| Series | STripFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 17A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 60mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 30W |
| Typical Gate Charge Qg @ Vgs | 4.8nC |
| Maximum Gate Source Voltage Vgs | -16, +16V |
| Forward Voltage Vf | 1.5V |
Key Features
- Enhancement mode channel for improved switching performance.
- Maximum power dissipation of 30 watts for reliable operation.
- Low drain-source resistance of 60 milliohms reduces conduction losses.
- Wide operating temperature range from -55°C to 175°C ensures durability.
- Typical gate charge of 4.8 nC at Vgs for efficient gate control.
- Maximum gate-source voltage rating of ±16 volts for protection against voltage spikes.
- Designed for surface mount applications with a standard TO-252 package.
- Forward voltage of 1.5 volts supports efficient conduction.
Product Description
STMicroelectronics STD17NF03LT4 is a high-performance N-Channel STripFET MOSFET designed for industrial and electronic component applications. This MOSFET delivers a continuous drain current of 17 A with a maximum drain-source voltage of 30 V, suitable for efficient power switching and amplification tasks.
Featuring an enhancement mode channel type, the device offers low conduction losses thanks to its maximum drain-source resistance of 60 mΩ, enabling energy-efficient operation in compact electronic circuits.
The transistor supports a maximum power dissipation of 30 W, making it reliable under moderate thermal conditions. Its gate charge of 4.8 nC at the gate-source voltage and voltage ratings of up to ±16 V provide robust control for switching applications.
Physical dimensions of 6.6 mm length, 6.2 mm width, and 2.4 mm height make it compatible with standard surface mount technology (SMT) processes. The TO-252 package ensures good thermal performance and ease of assembly.
This MOSFET operates reliably across a wide temperature range from -55°C to 175°C, making it ideal for use in demanding industrial environments. Enhancement mode channel for precise switching control. Low Rds(on) reduces power losses and improves efficiency.
Compact TO-252 package optimizes PCB space utilization. Wide operating temperature range enhances durability in harsh conditions. Gate-source voltage tolerance protects against voltage spikes. STMicroelectronics STripFET MOSFETs are widely used in industrial power management, electronic switching, and signal amplification.
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Frequently Asked Questions
The maximum continuous drain current of this model is 17 A.
This MOSFET has a maximum drain-source voltage rating of 30 V.
It supports a maximum power dissipation of 30 W.
The typical gate charge at the gate-source voltage is 4.8 nC.
The maximum gate-source voltage rating is ±16 V.
The dimensions are 6.6 mm in length, 6.2 mm in width, and 2.4 mm in height.
This model uses a TO-252 package type, designed for surface mount applications.
The maximum drain-source resistance is 60 mΩ, which helps reduce conduction losses.
It operates reliably across a wide temperature range from -55°C to 175°C.
This model features an N-channel enhancement mode, which allows for improved switching performance.
It is widely used in industrial power management, electronic switching, and signal amplification.
The forward voltage is 1.5 V, supporting efficient conduction.
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