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STMicroelectronics N-Channel IGBT 80 A 650 V 3-Pin TO-247 Through Hole STGW60H65DFB

Category IGBT Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 20.15mm
Model STGW60H65DFB
Mount Type Through Hole
Series H
Maximum Operating Temperature 175°C
Package Type TO-247
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Maximum Continuous Collector Current Ic 80A
Maximum Collector Emitter Voltage Vceo 650V
Maximum Collector Emitter Saturation Voltage VceSAT 2.3V
Channel Type N
Maximum Power Dissipation Pd 375W
Maximum Gate Emitter Voltage VGEO ±20 V

Key Features

  • The device supports a maximum continuous collector current of 80 amperes.
  • It has a maximum collector emitter voltage of 650 volts for high voltage applications.
  • Maximum power dissipation capability of 375 watts ensures reliable operation under load.
  • Operates within a temperature range of -55°C to 175°C for durability in varied environments.
  • The maximum gate emitter voltage is ±20 volts, allowing robust gate control.
  • Collector emitter saturation voltage is low at 2.3 volts, enhancing efficiency.
  • Compliant with RoHS standards for environmental safety.
  • Package type is TO-247 with a through-hole mount for easy PCB integration.

Product Description

STMicroelectronics STGW60H65DFB is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for industrial power control and switching applications. Rated at 80 A continuous collector current and 650 V collector emitter voltage, this device offers efficient power handling with low conduction losses. The 3-pin TO-247 through-hole package provides mechanical robustness and ease of mounting on power electronics boards.

IGBTs like the STGW60H65DFB combine MOSFET gate input characteristics with bipolar transistor power capabilities, enabling efficient and fast switching essential for modern industrial, HVAC, motor drive, and manufacturing control systems. Its maximum power dissipation of 375 W and wide operating temperature range from -55°C to 175°C ensure reliable performance even in demanding environments.

The device features a maximum gate emitter voltage of ±20 V and a collector emitter saturation voltage of only 2.3 V, which helps minimize power losses and heat generation, thereby improving overall system efficiency. RoHS compliance ensures adherence to environmental safety standards.

The STMicroelectronics STGW60H65DFB is suitable for applications including inverter circuits, power converters, motor controllers, and general-purpose power switching, supporting industrial automation and electrical equipment manufacturing. Its robust design and proven technology make it ideal for high-power semiconductor needs.

The device supports a maximum continuous collector current of 80 amperes. It has a maximum collector emitter voltage of 650 volts for high voltage applications. Maximum power dissipation capability of 375 watts ensures reliable operation under load.

Operates within a temperature range of -55°C to 175°C for durability in varied environments. The maximum gate emitter voltage is ±20 volts, allowing robust gate control. Collector emitter saturation voltage is low at 2.3 volts, enhancing efficiency.

Compliant with RoHS standards for environmental safety. Package type is TO-247 with a through-hole mount for easy PCB integration. The transistor is designed for fast switching in power electronics applications. Explore more STMicroelectronics semiconductor components on EnvMart for enhanced industrial and electronic systems development.

STMicroelectronics N-Channel IGBT 80 A 650 V 3-Pin TO-247 Through Hole STGW60H65DFB
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Frequently Asked Questions

The maximum continuous collector current of this model is 80 amperes.

This IGBT has a maximum collector emitter voltage of 650 volts, suitable for high voltage applications.

It has a maximum power dissipation capability of 375 watts, ensuring reliable operation under load.

This model operates within a temperature range of -55°C to 175°C, allowing for durability in varied environments.

The maximum gate emitter voltage is ±20 volts, providing robust gate control.

The collector emitter saturation voltage is low at 2.3 volts, which enhances efficiency.

It comes in a TO-247 package type with a through-hole mount for easy PCB integration.

This model features a 3-pin configuration, facilitating its integration into circuits.

Yes, it is compliant with RoHS standards for environmental safety.

This IGBT is suitable for applications including inverter circuits, power converters, motor controllers, and general-purpose power switching.

This device belongs to the H series of IGBTs from STMicroelectronics.

The country of origin for this IGBT is India.

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