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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 20.15mm |
| Model | STGW20H60DF |
| Mount Type | Through Hole |
| Series | Trench Gate Field Stop |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 40A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 167W |
| Maximum Gate Emitter Voltage VGEO | ±20 V |
STMicroelectronics STGW20H60DF is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed to provide efficient high-current and high-voltage switching performance. It features a 3-pin TO-247 package with through hole mounting, making it suitable for various industrial, electronic, and power control applications.
This device supports a maximum continuous collector current of 40 amperes and a collector emitter voltage rating of 600 volts, accommodating demanding power loads. The maximum power dissipation is 167 watts, helping manage heat effectively in high power circuits.
The STGW20H60DF has a maximum gate emitter voltage of ±20 volts and a low collector emitter saturation voltage of 2 volts which allows for high efficiency and fast switching speeds. Its operating temperature range from -55°C to 175°C ensures reliable operation in diverse environments.
Featuring trench gate field stop technology, this IGBT combines the easy gate drive characteristics of MOSFETs with the high current carrying capability of bipolar transistors. It is compliant with RoHS standards, supporting environmentally friendly electronics design.
This transistor is widely used in industrial power electronics, motor drives, inverters, and other applications requiring high-speed switching and robust performance. Handles maximum continuous collector current of 40 amperes.
Maximum collector emitter voltage rating of 600 volts. Supports power dissipation up to 167 watts. Compact 3-pin TO-247 through hole package. Maximum gate emitter voltage ±20 volts for durable switching. Low collector emitter saturation voltage of 2 volts.
Wide operating temperature range from -55°C to 175°C. Trench gate field stop technology for enhanced efficiency. RoHS compliant for environmental safety. Ideal for industrial power electronics and motor control applications.
Explore the extensive range of STMicroelectronics semiconductor products at EnvMart for reliable and high-performance power electronic solutions.
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