STMicroelectronics N-Channel IGBT, 40 A 600 V, 3-Pin TO-247 Through Hole STGW20V60DF

STMicroelectronics STGW20V60DF is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for power switching and amplification. The device integrates the advantages of MOSFET gate drive with bipolar transistor current handling, enabling efficient and fast switching at high currents.

This 40 A, 600 V IGBT housed in a 3-pin TO-247 through hole package offers excellent thermal and electrical performance for industrial power electronics applications.

It supports a maximum power dissipation of 167 W and operates reliably at temperatures as high as 175°C. With a switching speed up to 1 MHz and low collector-emitter saturation voltage of 2.2 V, it is well-suited for motor drives, power inverters, and induction heating.

The device's gate tolerate voltages of ±20 V, allowing strong control and protection in high-voltage systems. The form factor with dimensions of 20.15 mm (height), 15.75 mm (length), and 5.15 mm (width) facilitates mounting versatility in power circuits.

Compliant with RoHS standards, this STMicroelectronics IGBT provides environmental safety and quality assurance with strict manufacturing guidelines. The STGW20V60DF is ideal for industrial electronics, power management, and high-efficiency energy conversion systems.

This IGBT features a 3-pin through hole mounting for mechanical and electrical durability. Maximum continuous collector current of 40 A enables high-current applications. 600 V maximum collector-emitter voltage supports industrial power levels.

High switching frequency up to 1 MHz suits fast switching environments. Robust maximum operating temperature rating of 175°C ensures reliability. Low saturation voltage of 2.2 V reduces power losses in conduction. Compliant with RoHS environmental standards for safe usage.

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