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STMicroelectronics FDmesh N-Channel Power MOSFET 11 A 600 V Enhancement Mode 3-Pin TO-252 STD13NM60ND
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.4mm |
| Length | 6.6mm |
| Model | STD13NM60ND |
| Width | 6.2mm |
| Mount Type | Surface |
| Series | FDmesh |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 11A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 380mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 109W |
| Typical Gate Charge Qg @ Vgs | 24.5nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.6V |
Key Features
- Maximum continuous drain current of 11 A ensures reliable performance.
- Drain-source voltage rated at 600 V for robust operation.
- Enhancement mode channel type provides precise control.
- Compact TO-252 package with 3 pins suitable for surface mount applications.
- Low drain-source resistance of 380 mΩ reduces power loss.
- Wide operating temperature range from -55°C to +150°C.
- Typical gate charge of 24.5 nC supports fast switching speeds.
- Maximum power dissipation of 109 W for efficient heat handling.
Product Description
STMicroelectronics STD13NM60ND is a high-performance N-Channel FDmesh Power MOSFET designed for demanding electronic components applications requiring efficient power management and switching.
This 3-pin TO-252 surface-mount device offers a maximum continuous drain current of 11 A and can withstand up to 600 V drain-source voltage, making it suitable for power conversion, motor drives, and industrial power supplies. The enhancement mode channel type allows for reliable switching operation.
The device features a low drain-source resistance of 380 mΩ, enabling reduced conduction losses and improved energy efficiency in circuits. It has a maximum power dissipation rating of 109 W and can operate within a broad temperature range from -55°C to 150°C, suitable for various industrial environments.
The typical gate charge of 24.5 nC supports rapid switching transitions, essential for high-frequency applications. With a compact TO-252 package measuring 6.6 mm in length, 6.2 mm in width, and 2.4 mm in height, the STD13NM60ND offers space-saving installation on circuit boards with surface mounting.
Key electrical characteristics include a maximum gate-source voltage of ±25 V and a forward voltage of 1.6 V, ensuring robustness and protection during operation. This MOSFET is ideal for use in power supplies, motor control, UPS systems, and other electronic manufacturing applications.
Maximum continuous drain current of 11 A ensures reliable performance. Drain-source voltage rated at 600 V for robust operation. Enhancement mode channel type provides precise control. Compact TO-252 package with 3 pins suitable for surface mount applications.
Low drain-source resistance of 380 mΩ reduces power loss. Wide operating temperature range from -55°C to +150°C. Typical gate charge of 24.5 nC supports fast switching speeds. Maximum power dissipation of 109 W for efficient heat handling.
Forward voltage of 1.6 V and gate-source voltage ±25 V for operational safety. Small form factor dimensions: Length 6.6 mm, Width 6.2 mm, Height 2.4 mm. This product is well-suited for industrial, manufacturing, and electronic component applications requiring dependable MOSFET switching performance and thermal stability.
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Frequently Asked Questions
The maximum continuous drain current for this model is 11 A, ensuring reliable performance in various applications.
This MOSFET has a drain-source voltage rating of 600 V, allowing for robust operation in high-voltage applications.
It comes in a compact TO-252 package, which is suitable for surface mount applications.
The operating temperature range for this MOSFET is from -55°C to 150°C, making it suitable for various industrial environments.
The typical gate charge for this model is 24.5 nC, supporting fast switching speeds essential for high-frequency applications.
This MOSFET has a maximum power dissipation rating of 109 W, which helps in efficient heat handling during operation.
It features a low drain-source resistance of 380 mΩ, which reduces power loss in circuits.
The forward voltage rating for this MOSFET is 1.6 V, providing operational safety during use.
This model has 3 pins, making it compatible with various circuit designs that require surface mounting.
It utilizes an enhancement mode N-channel, which provides precise control for switching operations.
The maximum gate-source voltage for this model is ±25 V, ensuring robustness and protection during operation.
This MOSFET is well-suited for power supplies, motor control, UPS systems, and other electronic manufacturing applications.
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