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STMicroelectronics N-Channel IGBT, 40 A 600 V, 3-Pin TO-220 Through Hole STGF20H60DF
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 16.4mm |
| Length | 10.4mm |
| Model | STGF20H60DF |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | Trench Gate Field Stop |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 40A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 167W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
Key Features
- High efficiency power semiconductor with fast switching characteristics.
- Maximum continuous collector current of 40 amperes ensures robust handling of load currents.
- Collector-emitter voltage rating of 600 volts supports high voltage applications.
- Package type TO-220 with through-hole mount provides ease of installation on printed circuit boards.
- Maximum power dissipation of 167 watts enables reliable thermal performance.
- Wide operating temperature range from -55°C to 175°C suitable for industrial environments.
- Trench Gate Field Stop series enhances switching speed and performance.
- Maximum gate-emitter voltage of 20 volts ensures safe gate operation.
Product Description
STMicroelectronics STGF20H60DF is a three-terminal N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high efficiency and fast switching applications. It combines the gate-drive features of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors, making it ideal for power electronics.
This IGBT supports a maximum continuous collector current of 40 amperes and a collector-emitter voltage rating of 600 volts. Packaged in a 3-pin TO-220 through-hole form factor, it is suitable for easy mounting on circuit boards in various industrial and commercial applications.
The component can dissipate a maximum power of 167 watts and operates reliably across a broad temperature range from -55°C to 175°C. The Trench Gate Field Stop technology applied in this series enhances switching speed and performance, making it suitable for demanding power management systems.
Its maximum gate-emitter voltage is 20 volts, safeguarding the control input. The compact package dimensions - height 16.4 mm, length 10.4 mm, width 4.6 mm - ensure it fits efficiently in constrained layouts.
High efficiency and fast switching for improved power management. Handles continuous current up to 40 A, suitable for various power loads. Supports up to 600 V blocking voltage in high voltage circuits. TO-220 through-hole package aids ease of assembly and thermal management.
Wide operating temperature range fits harsh industrial conditions. Trench Gate Field Stop series ensures enhanced performance. Compact dimensions facilitate flexible PCB layouts. Designed for industrial, manufacturing, and power control applications.
This product is ideal for industrial and manufacturing equipment, power supply systems, motor drives, and other electronics requiring high current switching with robust thermal and electrical performance. The STGF20H60DF IGBT delivers reliable operation and efficient performance in demanding environments.
Explore our Semiconductor category on EnvMart for additional power transistor components and IGBTs suitable for your design and production requirements.
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Frequently Asked Questions
The maximum continuous collector current for the STGF20H60DF is 40 amperes.
This IGBT has a collector-emitter voltage rating of 600 volts, making it suitable for high voltage applications.
The maximum power dissipation for this model is 167 watts, allowing for reliable thermal performance.
The dimensions of this IGBT are 16.4 mm in height, 10.4 mm in length, and 4.6 mm in width.
It operates reliably across a temperature range from -55°C to 175°C, suitable for industrial environments.
This model features a TO-220 package type with a through-hole mount, facilitating easy installation on printed circuit boards.
The maximum gate-emitter voltage for the STGF20H60DF is 20 volts, ensuring safe operation of the gate.
The STGF20H60DF belongs to the Trench Gate Field Stop series, which enhances switching speed and performance.
This IGBT has a pin count of 3, suitable for various circuit configurations.
It features an N-channel, which is typical for high efficiency power applications.
This IGBT is ideal for industrial and manufacturing equipment, power supply systems, and motor drives requiring high current switching.
The maximum collector-emitter saturation voltage for the STGF20H60DF is 2 volts.
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