STMicroelectronics MDmesh K5 SuperMESH5 N-Channel MOSFET, 12 A, 800 V Enhancement Mode, 3-Pin TO-220 STP13N80K5

STMicroelectronics STP13N80K5 is an N-channel MDmesh™ K5 series MOSFET transistor, built with SuperMESH5 technology, designed for enhancement mode operation. It supports a maximum continuous drain current of 12 A and can withstand a maximum drain-source voltage of 800 V, housed in a 3-pin TO-220 package optimized for through-hole mounting.

This MOSFET provides excellent performance with a low maximum drain-source resistance of 450 mΩ and a high power dissipation capacity of 190 W, making it suitable for demanding power switching and amplification industrial applications.

Typical gate charge of 29 nC at the gate-source voltage enables efficient and fast switching operations, supporting high-efficiency electronic circuit designs. The device is rated for operating temperatures from -55°C minimum to 150°C maximum, ensuring durability and stability in various thermal environments.

With its compact physical dimensions of 15.75 mm height, 10.4 mm length, and 4.6 mm width, the STP13N80K5 is easy to incorporate into a wide range of equipment for industrial, manufacturing, power management, and electronic device applications.

MDmesh K5 SuperMESH5 technology ensures robust performance and reliability. High power dissipation rating of 190 W. Wide operating temperature range: -55°C to 150°C. Low drain-source resistance of 450 mΩ supports efficient current flow.

Through-hole mounting with 3-pin TO-220 package. Typical gate charge facilitates fast switching for power electronics. Compact dimensions suitable for varied industrial electronic assemblies.

This STMicroelectronics MOSFET is ideal for integration in power converters, motor drives, inverters, and other industrial electronics requiring reliable high-voltage switching capabilities. Explore more power semiconductor components and industrial electronics at EnvMart for comprehensive solutions tailored to your application's demands.