STMicroelectronics MDmesh K5 Series SuperMESH5 N-Channel MOSFET, 800 V, 19.5 A, 3-Pin TO-247 STW25N80K5

STMicroelectronics STW25N80K5 is an N-Channel MDmesh™ K5 series MOSFET featuring SuperMESH5™ technology, designed for high efficiency power switching applications. With a continuous drain current rating of 19.5 A and a maximum drain-source voltage of 800 V, this MOSFET is ideal for industrial, power supply, automotive, and electronic circuit applications requiring robust and reliable high voltage switching.

The device is housed in a 3-pin TO-247 through-hole package that facilitates easy mounting and excellent thermal performance. Its low maximum drain-source resistance of 260 milliohms ensures reduced conduction losses, contributing to improved power efficiency in power conversion and control circuits.

The MOSFET operates in enhancement mode with a maximum gate-source voltage of ±30 V and typical gate charge of 40 nC at Vgs, allowing fast switching characteristics suitable for high-frequency applications. Designed for operation across a wide temperature range from -55°C to 150°C, it offers outstanding thermal and electrical stability even in demanding environments.

Its maximum power dissipation rating of 250 W supports high power applications, making it suitable for industrial automation, power inverters, motor drives, and energy management systems. The product does not carry any specific standards or automotive certifications but is engineered for reliable performance within specified limits.

This MOSFET is part of the MDmesh K5 series, integrating STMicroelectronics' SuperMESH5 enhancements to offer improved switching performance and efficiency. The package dimensions are compact with a length of 15.75 mm, height of 20.15 mm, and width of 5.15 mm, optimizing space in electronic assemblies.

Features high continuous drain current capability of 19.5 A. Operating voltage of up to 800 V ensures robustness in high voltage applications. Utilizes MDmesh K5 technology with SuperMESH5 architecture for enhanced performance.

Package type is a sturdy TO-247, suitable for through-hole mounting. Offers maximum power dissipation of 250 W for high efficiency thermal handling. Low maximum drain-source on resistance of 260 milliohms reduces conduction losses.

Maximum gate-source voltage is ±30 V ensuring reliable gate operation. Typical gate charge of 40 nC at Vgs provides efficient switching. Designed for use in enhancement channel mode for controlled switching. Wide operating temperature range from -55°C to 150°C supports harsh environments.

Suitable for applications in electronic power control, industrial automation, and electronic components requiring high-speed and efficient MOSFET switching devices. Explore more components and MOSFETs by STMicroelectronics on EnvMart.