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STMicroelectronics N-Channel Insulated Gate Bipolar Transistor IGBT, 40 A Collector Current, 600 V Collector STGW20V60F

Category IGBT Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 20.15mm
Length 15.75mm
Model STGW20V60F
Width 5.15mm
Mount Type Through Hole
Series V
Maximum Operating Temperature 175°C
Package Type TO-247
Minimum Operating Temperature -55°C
Standards/Approvals Lead free package
Pin Count 3
Maximum Continuous Collector Current Ic 40A
Maximum Collector Emitter Voltage Vceo 600V
Maximum Collector Emitter Saturation Voltage VceSAT 2.2V
Channel Type N
Maximum Power Dissipation Pd 167W
Maximum Gate Emitter Voltage VGEO ±20 V

Key Features

  • Maximum continuous collector current of 40 A ensures robust power handling.
  • Collector emitter voltage rating of 600 V suitable for high-voltage operations.
  • Comes in a 3-pin TO-247 package with through-hole mounting style for easy integration.
  • Maximum power dissipation of 167 W allows operation in demanding thermal conditions.
  • Wide operating temperature range from -55°C to 175°C supports harsh environments.
  • Low collector emitter saturation voltage of 2.2 V ensures efficient conduction.
  • Maximum gate emitter voltage of ±20 V protects the gate drive circuitry.
  • Lead-free package compliant with environmental standards.

Product Description

STMicroelectronics STGW20V60F is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for industrial power electronics. This device combines the simple gate-drive characteristics of MOSFETs with the high-current and low saturation voltage capabilities of bipolar transistors.

Specifically engineered for applications requiring efficient and fast switching, it supports a maximum continuous collector current of 40 A and can withstand a collector emitter voltage of 600 V.

The TO-247 package with through-hole mounting provides robust mechanical stability and ease of soldering during PCB assembly. Operating temperature ranges from a minimum of -55°C up to a maximum of 175°C, allowing use in a diverse set of industrial environments.

With a maximum power dissipation rating of 167 W and a low saturation voltage of 2.2 V, this IGBT ensures minimal power losses and reliable performance. Additional key features include a maximum gate emitter voltage tolerance of ±20 V and lead-free packaging that supports environmental compliance.

The STGW20V60F is suitable for use in power conversion, motor drives, inverter circuits, and other industrial applications demanding swift and efficient switching. Maximum continuous collector current of 40 A. Maximum collector emitter voltage of 600 V.

Maximum power dissipation of 167 W. 3-pin TO-247 package, through-hole mount. Wide operating temperature range from -55°C to 175°C. Maximum gate emitter voltage of ±20 V. Low collector emitter saturation voltage of 2.2 V.

Lead-free environmental compliance. Fast switching speed of 1 MHz. Compact dimensions: 20.15mm height, 15.75mm length, 5.15mm width. Explore STMicroelectronics power semiconductor products and discover innovative solutions for your power electronics needs.

STMicroelectronics N-Channel Insulated Gate Bipolar Transistor IGBT, 40 A Collector Current, 600 V Collector STGW20V60F
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Frequently Asked Questions

The maximum continuous collector current for this model is 40 A.

It has a collector emitter voltage rating of 600 V, suitable for high-voltage operations.

The maximum power dissipation is rated at 167 W, allowing operation in demanding thermal conditions.

This IGBT operates within a wide temperature range from -55°C to 175°C.

It comes in a 3-pin TO-247 package with a through-hole mounting style for easy integration.

The maximum gate emitter voltage tolerance is ±20 V, which protects the gate drive circuitry.

The low collector emitter saturation voltage is 2.2 V, ensuring efficient conduction.

This IGBT is suitable for power conversion, motor drives, inverter circuits, and other industrial applications requiring efficient switching.

The dimensions of this model are 20.15 mm in height, 15.75 mm in length, and 5.15 mm in width.

Yes, it features a lead-free package that complies with environmental standards.

It belongs to the V series of IGBTs from STMicroelectronics.

This IGBT has a pin count of 3.

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