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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 20.15mm |
| Length | 15.75mm |
| Model | STGW20V60F |
| Width | 5.15mm |
| Mount Type | Through Hole |
| Series | V |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | Lead free package |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 40A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.2V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 167W |
| Maximum Gate Emitter Voltage VGEO | ±20 V |
STMicroelectronics STGW20V60F is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for industrial power electronics. This device combines the simple gate-drive characteristics of MOSFETs with the high-current and low saturation voltage capabilities of bipolar transistors.
Specifically engineered for applications requiring efficient and fast switching, it supports a maximum continuous collector current of 40 A and can withstand a collector emitter voltage of 600 V.
The TO-247 package with through-hole mounting provides robust mechanical stability and ease of soldering during PCB assembly. Operating temperature ranges from a minimum of -55°C up to a maximum of 175°C, allowing use in a diverse set of industrial environments.
With a maximum power dissipation rating of 167 W and a low saturation voltage of 2.2 V, this IGBT ensures minimal power losses and reliable performance. Additional key features include a maximum gate emitter voltage tolerance of ±20 V and lead-free packaging that supports environmental compliance.
The STGW20V60F is suitable for use in power conversion, motor drives, inverter circuits, and other industrial applications demanding swift and efficient switching. Maximum continuous collector current of 40 A. Maximum collector emitter voltage of 600 V.
Maximum power dissipation of 167 W. 3-pin TO-247 package, through-hole mount. Wide operating temperature range from -55°C to 175°C. Maximum gate emitter voltage of ±20 V. Low collector emitter saturation voltage of 2.2 V.
Lead-free environmental compliance. Fast switching speed of 1 MHz. Compact dimensions: 20.15mm height, 15.75mm length, 5.15mm width. Explore STMicroelectronics power semiconductor products and discover innovative solutions for your power electronics needs.
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