onsemi NPN Power Transistor, 16 A Collector Current, 250 V Collector Emitter Voltage, TO-247 Package MJW21196G

onsemi MJW21196G is a high-power NPN bipolar transistor designed for demanding electronic applications requiring substantial current and voltage ratings. Packaged in a TO-247 configuration, this transistor offers reliable switching and amplification performance in industrial and commercial electronics.

This transistor supports a maximum DC collector current of 16 A and a collector emitter voltage of up to 250 V, making it suitable for power conversion, motor control, and power amplifier circuits. Its maximum power dissipation rating of 200 W allows effective thermal management if paired with suitable heat sinks.

The device operates across a wide temperature range from -65°C to 150°C, ensuring stability and reliability in harsh environments including industrial machinery, HVAC controls, and automotive electronics (non-automotive grade). Its minimum DC current gain of 8 and a maximum transition frequency of 1 MHz support efficient switching operations and drive capabilities.

Dimensionally compact with a length of 16.26 mm, width of 5.3 mm, and height of 41.91 mm, the MJW21196G in the TO-247 package facilitates easy integration in through-hole PCB designs. It features three pins and a single transistor configuration with NPN polarity typical for power transistor roles.

The maximum collector base voltage of 400 V dc and maximum emitter base voltage of 5 V provide additional tolerance to voltage stresses in circuit designs. This power transistor is ideal for use in industrial power supplies, high-current switching circuits, and other bipolar transistor applications requiring robust performance.

Maximum DC collector current of 16 A. Collector emitter voltage rating of 250 V. TO-247 package for through-hole mounting. Maximum power dissipation of 200 W. Wide operating temperature from -65°C to 150°C. Minimum DC current gain of 8.

1 MHz maximum transition frequency. NPN transistor polarity. Dimensions: 16.26 mm x 5.3 mm x 41.91 mm. Maximum collector base voltage 400 V dc.

This product is a reliable option for power transistor needs in industrial, laboratory, manufacturing, and electronic design and prototyping environments. Browse more Power Transistors and bipolar transistors on EnvMart for related solutions from trusted brands including onsemi.