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onsemi PNP Power Transistor, Maximum DC Collector Current -16 A, Collector Emitter Voltage -250 V, 3-Pin TO-247 MJW21193G

Category Power Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.65mm
Length 16.26mm
Model MJW21193G
Width 5.3mm
Mount Type Through Hole
Series MJW21193
Maximum Operating Temperature 150°C
Package Type TO-247
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -250V
Minimum DC Current Gain hFE 8
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 400V dc
Maximum Power Dissipation Pd 200W
Maximum DC Collector Current Idc -16A
Transistor Configuration Single
Maximum Transition Frequency ft 1MHz

Key Features

  • Supports maximum DC collector current of -16 A for robust current handling.
  • Maximum collector-emitter voltage of -250 V ensures high voltage operation.
  • Power dissipation up to 200 W allows sustained performance at high power loads.
  • Through hole mount with 3-pin TO-247 package for reliable PCB installation.
  • Operating temperature range from -65°C to 150°C suits various industrial environments.
  • Single transistor configuration ensures simple circuit integration.
  • Minimum DC current gain (hFE) of 8 guarantees efficient amplification.
  • Maximum transition frequency of 1 MHz supports high-frequency switching.

Product Description

The onsemi MJW21193G is a high-performance PNP power transistor tailored for use in industrial and commercial electronic applications requiring reliable switching and amplification under demanding conditions.

This transistor supports a maximum DC collector current of -16 A and a collector-emitter voltage up to -250 V, providing strong capability for heavy-duty power control. Featuring a TO-247 package with three pins and through-hole mounting, the device allows straightforward PCB integration and mechanical stability.

It maintains power dissipation at 200 W, allowing it to endure substantial thermal loads typically encountered in power electronic circuits. Operating temperature ranges from -65°C to 150°C, making it suitable for harsh industrial environments including manufacturing equipment and power supplies.

The transistor shows a minimum DC current gain of 8 and a maximum transition frequency of 1 MHz, enabling it to perform efficiently in switching and amplification roles.

This product is a single transistor configuration without additional automotive qualifications, designed primarily for industrial, laboratory, and electronic manufacturing applications.

Supports up to -16 A DC collector current. Handles up to -250 V collector-emitter voltage. Power dissipation rated at 200 W. 3-pin TO-247 package with through-hole mount. Operating temperature from -65°C to 150°C. Minimum DC current gain of 8.

Maximum transition frequency 1 MHz. Compact form factor: 16.26 mm length, 5.3 mm width, 1.65 mm height. Ideal for use in electronic power control, industrial equipment, HVAC systems, and laboratory instrumentation. Explore more Power Transistors and industrial semiconductors on EnvMart for reliable performance in your projects.

onsemi PNP Power Transistor, Maximum DC Collector Current -16 A, Collector Emitter Voltage -250 V, 3-Pin TO-247 MJW21193G
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Frequently Asked Questions

The maximum DC collector current for this transistor is -16 A.

The collector-emitter voltage rating is -250 V.

It has a power dissipation capacity of 200 W.

The operating temperature range is from -65°C to 150°C.

This transistor comes in a TO-247 package with a through-hole mount.

The minimum DC current gain (hFE) is 8.

The maximum transition frequency is 1 MHz.

The dimensions are 16.26 mm in length, 5.3 mm in width, and 1.65 mm in height.

It has a single transistor configuration.

The maximum emitter-base voltage (VEBO) is 5 V.

This transistor is suitable for electronic power control, industrial equipment, HVAC systems, and laboratory instrumentation.

The country of origin for this product is India.

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