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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.65mm |
| Length | 16.26mm |
| Model | MJW21193G |
| Width | 5.3mm |
| Mount Type | Through Hole |
| Series | MJW21193 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -250V |
| Minimum DC Current Gain hFE | 8 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 400V dc |
| Maximum Power Dissipation Pd | 200W |
| Maximum DC Collector Current Idc | -16A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 1MHz |
The onsemi MJW21193G is a high-performance PNP power transistor tailored for use in industrial and commercial electronic applications requiring reliable switching and amplification under demanding conditions.
This transistor supports a maximum DC collector current of -16 A and a collector-emitter voltage up to -250 V, providing strong capability for heavy-duty power control. Featuring a TO-247 package with three pins and through-hole mounting, the device allows straightforward PCB integration and mechanical stability.
It maintains power dissipation at 200 W, allowing it to endure substantial thermal loads typically encountered in power electronic circuits. Operating temperature ranges from -65°C to 150°C, making it suitable for harsh industrial environments including manufacturing equipment and power supplies.
The transistor shows a minimum DC current gain of 8 and a maximum transition frequency of 1 MHz, enabling it to perform efficiently in switching and amplification roles.
This product is a single transistor configuration without additional automotive qualifications, designed primarily for industrial, laboratory, and electronic manufacturing applications.
Supports up to -16 A DC collector current. Handles up to -250 V collector-emitter voltage. Power dissipation rated at 200 W. 3-pin TO-247 package with through-hole mount. Operating temperature from -65°C to 150°C. Minimum DC current gain of 8.
Maximum transition frequency 1 MHz. Compact form factor: 16.26 mm length, 5.3 mm width, 1.65 mm height. Ideal for use in electronic power control, industrial equipment, HVAC systems, and laboratory instrumentation. Explore more Power Transistors and industrial semiconductors on EnvMart for reliable performance in your projects.
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