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STMicroelectronics STripFET H7 N-Channel MOSFET 110A 100V Enhancement Mode 8-Pin PowerFLAT STL110N10F7
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 950μm |
| Length | 5.4mm |
| Model | STL110N10F7 |
| Width | 6.35mm |
| Mount Type | Surface |
| Series | STripFET H7 |
| Maximum Operating Temperature | 175°C |
| Package Type | PowerFLAT |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 110A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 5W |
| Typical Gate Charge Qg @ Vgs | 60nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Features an enhancement mode channel type for high efficiency.
- Built with STripFET H7 series technology for ultra-low gate charge.
- Maximum drain-source resistance of 6 milliohms ensuring low power loss.
- Maximum power dissipation of 5 watts suitable for robust applications.
- Wide operating temperature range from -55°C to 175°C supporting industrial environments.
- Surface mount design with compact 6.35mm width and 5.4mm length dimensions.
- Typical gate charge of 60 nanocoulombs enabling fast switching.
- Forward voltage drop of 1.2 volts optimizing conduction efficiency.
Product Description
STMicroelectronics STL110N10F7 is a high-performance N-Channel MOSFET transistor from the STripFET H7 series, designed to deliver ultra-low gate charge and low on-resistance for efficient power switching. Featuring an 8-pin PowerFLAT surface mount package, this device supports a maximum continuous drain current of 110 amperes and a maximum drain-source voltage of 100 volts.
Its enhancement mode channel provides reliable switching capabilities with a maximum drain-source resistance of 6 milliohms, allowing minimal conduction losses. With a typical gate charge of 60 nanocoulombs at gate-source voltage, it supports fast switching speeds suitable for power management circuits in industrial and commercial electronic applications.
The MOSFET supports a maximum power dissipation of 5 watts and withstands operating temperatures ranging from -55°C to 175°C, making it appropriate for harsh environments. The package dimensions - 6.35 mm width, 5.4 mm length, and 950 µm height - offer a compact footprint for space-constrained designs.
Its maximum gate-source voltage rating from -20V to +20V ensures robust operation without risk of gate oxide damage. The forward voltage drop measures 1.2 volts, enhancing conduction efficiency in power circuitry. Not designed with automotive standards compliance, this component is ideal for industrial power switching, DC-DC converters, and other general electronic circuits requiring efficient and durable MOSFETs.
Features an enhancement mode channel for efficient power control. STripFET H7 technology ensures ultra-low gate charge and on-resistance. 110A maximum continuous drain current supports high power applications. 100V maximum drain-source voltage provides versatility for various voltage levels.
Compact 8-pin PowerFLAT surface mount package for space saving PCB design. Wide temperature range (-55°C to 175°C) suits industrial environments. 5W maximum power dissipation for reliable thermal management. Typical gate charge of 60nC enables fast switching response.
Maximum gate-source voltage of -20 to +20V ensures device protection. Forward voltage drop of 1.2V optimizes conduction efficiency.
This MOSFET is a dependable choice for industrial equipment, power management circuits, and electronic manufacturing. Available in tape packaging, it facilitates efficient production line usage. Explore our Electronics & Electricals section at EnvMart for other discrete semiconductors and power management devices.
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Frequently Asked Questions
The STL110N10F7 has a maximum continuous drain current of 110 amperes.
This MOSFET supports a maximum drain-source voltage of 100 volts.
The typical gate charge for this model is 60 nanocoulombs.
The maximum power dissipation for the STL110N10F7 is 5 watts.
The package dimensions are 6.35 mm in width, 5.4 mm in length, and 950 μm in height.
It operates over a wide temperature range from -55°C to 175°C.
The maximum gate-source voltage rating is from -20V to +20V.
This MOSFET features an enhancement mode N-channel.
The maximum drain-source resistance is 6 milliohms.
The forward voltage drop is 1.2 volts, optimizing conduction efficiency.
This MOSFET has a pin count of 8.
The STL110N10F7 is designed for surface mounting.
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