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STMicroelectronics MDmesh M2 N-Channel MOSFET, 4.5 A, 650 V Enhancement, 3-Pin TO-252 STD6N60M2

Category Power MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 2.4mm
Length 6.6mm
Model STD6N60M2
Width 6.2mm
Mount Type Surface
Series MDmesh M2
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 4.5A
Maximum Drain Source Voltage Vds 650V
Maximum Drain Source Resistance Rds 1.2Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 60W
Typical Gate Charge Qg @ Vgs 8nC
Maximum Gate Source Voltage Vgs -25, +25V
Forward Voltage Vf 1.6V

Key Features

  • High-voltage power MOSFET suitable for switching applications.
  • Low typical gate charge of 8 nC for efficient switching.
  • Maximum power dissipation of 60 W supports demanding loads.
  • Surface mount TO-252 package with dimensions 6.6 mm length × 6.2 mm width × 2.4 mm height.
  • Wide operating temperature range from -55°C to 150°C.
  • Enhancement mode device with channel resistance of 1.2 Ω max.
  • Maximum gate-source voltage rating ±25 V ensures robust gate control.
  • Forward voltage of 1.6 V typical during conduction.

Product Description

STMicroelectronics STD6N60M2 is an N-channel Power MOSFET from the MDmesh™ M2 series designed for high-voltage switching applications. It features a maximum continuous drain current of 4.5 A and a maximum drain-source voltage of 650 V, making it well suited for power electronics circuits requiring robust and efficient MOSFET characteristics.

Housed in a compact TO-252 surface mount package with three pins, the STD6N60M2 offers excellent switching performance thanks to its low typical gate charge of 8 nC. It can dissipate up to 60 W of power and operates reliably across a temperature span from -55°C to 150°C, suitable for industrial and commercial applications.

This device operates in enhancement mode with a maximum drain-source resistance (Rds(on)) of 1.2 Ω, ensuring low conduction losses. The gate-source voltage rating is ±25 V, providing stable drive conditions under typical usage scenarios. A typical forward voltage drop of 1.6 V during conduction optimizes efficiency in power circuits.

The MDmesh M2 series of MOSFETs from STMicroelectronics are optimized for use in resonant switching supplies such as LLC converters, benefiting from their low gate charge and favorable output capacitance characteristics. These features allow faster switching and reduce power losses, enhancing overall circuit performance.

This MOSFET is widely used in electronic power conversion, industrial motor drives, power supply modules, and other semiconductor applications requiring reliable switching performance and robust voltage/current ratings.

High voltage MOSFET transistor for power switching applications. Low gate charge enables efficient converter designs. Compact TO-252 package suitable for surface mounting. Wide temperature tolerance supports harsh operating environments.

Designed for resonant LLC converters and switching power supplies. Robust electrical ratings support industrial and commercial uses. Enhancement mode channel for controlled switching.

Explore more high-quality power semiconductors from STMicroelectronics and related MOSFET offerings in the Electronics & Electricals category on EnvMart, tailored for discrete semiconductor needs across industrial, laboratory, and manufacturing sectors.

STMicroelectronics MDmesh M2 N-Channel MOSFET, 4.5 A, 650 V Enhancement, 3-Pin TO-252 STD6N60M2
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Frequently Asked Questions

The maximum continuous drain current for this model is 4.5 A.

It has a maximum drain-source voltage rating of 650 V.

The TO-252 package has dimensions of 6.6 mm in length, 6.2 mm in width, and 2.4 mm in height.

The typical gate charge for this MOSFET is 8 nC.

It can dissipate up to 60 W of power.

The operating temperature range is from -55°C to 150°C.

The maximum drain-source resistance (Rds(on)) is 1.2 Ω.

This model uses an enhancement mode N-channel.

The maximum gate-source voltage rating is ±25 V.

The typical forward voltage drop during conduction is 1.6 V.

This model is designed for surface mounting.

It is commonly used in electronic power conversion, industrial motor drives, and power supply modules.

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