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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.4mm |
| Length | 6.6mm |
| Model | STD6N60M2 |
| Width | 6.2mm |
| Mount Type | Surface |
| Series | MDmesh M2 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4.5A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 1.2Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 60W |
| Typical Gate Charge Qg @ Vgs | 8nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.6V |
STMicroelectronics STD6N60M2 is an N-channel Power MOSFET from the MDmesh™ M2 series designed for high-voltage switching applications. It features a maximum continuous drain current of 4.5 A and a maximum drain-source voltage of 650 V, making it well suited for power electronics circuits requiring robust and efficient MOSFET characteristics.
Housed in a compact TO-252 surface mount package with three pins, the STD6N60M2 offers excellent switching performance thanks to its low typical gate charge of 8 nC. It can dissipate up to 60 W of power and operates reliably across a temperature span from -55°C to 150°C, suitable for industrial and commercial applications.
This device operates in enhancement mode with a maximum drain-source resistance (Rds(on)) of 1.2 Ω, ensuring low conduction losses. The gate-source voltage rating is ±25 V, providing stable drive conditions under typical usage scenarios. A typical forward voltage drop of 1.6 V during conduction optimizes efficiency in power circuits.
The MDmesh M2 series of MOSFETs from STMicroelectronics are optimized for use in resonant switching supplies such as LLC converters, benefiting from their low gate charge and favorable output capacitance characteristics. These features allow faster switching and reduce power losses, enhancing overall circuit performance.
This MOSFET is widely used in electronic power conversion, industrial motor drives, power supply modules, and other semiconductor applications requiring reliable switching performance and robust voltage/current ratings.
High voltage MOSFET transistor for power switching applications. Low gate charge enables efficient converter designs. Compact TO-252 package suitable for surface mounting. Wide temperature tolerance supports harsh operating environments.
Designed for resonant LLC converters and switching power supplies. Robust electrical ratings support industrial and commercial uses. Enhancement mode channel for controlled switching.
Explore more high-quality power semiconductors from STMicroelectronics and related MOSFET offerings in the Electronics & Electricals category on EnvMart, tailored for discrete semiconductor needs across industrial, laboratory, and manufacturing sectors.
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