Infineon HEXFET N-Channel MOSFET 70 A 300 V Enhancement Mode 3-Pin TO-247AC IRFP4868PBF

Infineon IRFP4868PBF HEXFET N-Channel MOSFET is a robust semiconductor device engineered for demanding industrial applications such as motor control, AC-DC synchronous rectification, and power management. With its high continuous drain current capability of 70 A and a maximum drain-source voltage of 300 V, this MOSFET is ideal for efficient power switching and conversion in commercial and industrial environments.

The device comes in a 3-pin TO-247AC package that facilitates effective heat dissipation and through-hole mounting, enhancing mechanical stability in assemblies. Its enhancement mode channel ensures reliable switching performance with a low maximum drain-source resistance of 32 milliohms, which minimizes conduction losses and improves overall system efficiency.

Featuring a typical gate charge of 180 nC and a maximum gate-source voltage range of -20 to +20 V, it supports rapid switching and high transient voltage tolerance. The maximum power dissipation rating of 517 W and an operating temperature range spanning from -55°C to 175°C make this MOSFET suitable for operation under severe thermal conditions found in industrial and automotive sectors.

Manufactured to comply with RoHS standards and produced in Mexico, this Infineon HEXFET device delivers quality and regulatory compliance. Its compact form factor with dimensions of approximately 20.7 mm height, 15.87 mm length, and 5.31 mm width allows for integration in space-constrained designs.

This MOSFET is a key component in power electronic systems requiring reliable performance, including industrial motor drives, power supplies, and synchronous rectifiers. Its design supports applications demanding high efficiency and durability in environments such as manufacturing plants, HVAC system controls, and automotive electronics.

Features a rugged enhancement mode N-channel channel type suitable for power switching. TO-247AC package with through-hole mount providing ease of installation. Maximum continuous drain current of 70 A ensures high load handling capability.

Low resistance of 32 milliohms reduces power loss and enhances efficiency. Capable of dissipating up to 517 W power at maximum operating temperature of 175°C. Typical gate charge of 180 nC supports fast switching speeds.

Wide operating temperature range from -55°C to 175°C for harsh environments. Maximum gate-source voltage of ±20 V provides robust gate protection. Compact dimensions approximately 20.7 mm height, 15.87 mm length, and 5.31 mm width.

Compliant with RoHS standards and manufactured in Mexico. Explore additional Infineon semiconductor offerings on EnvMart for various industrial, laboratory, and manufacturing electronics applications.