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Infineon HEXFET Type P-Channel MOSFET 3 A 30 V Enhancement Mode 3-Pin SOT-23 IRLML5203TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.02mm |
| Length | 3.04mm |
| Model | IRLML5203TRPBF |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 3A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 165mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.25W |
| Typical Gate Charge Qg @ Vgs | 9.5nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Key Features
- High-performance HEXFET Series suitable for power management applications.
- Low on-resistance of 165 milliohms to reduce power loss and improve efficiency.
- Enhancement mode channel for reliable switching operations.
- Operates in a wide temperature range from -55°C to +150°C for robust industrial use.
- Designed with a maximum power dissipation of 1.25 W to support thermal stability.
- Compact dimensions of 3.04mm length, 1.4mm width, and 1.02mm height for space-saving PCB design.
- Maximum gate source voltage rated at -20 to +20 V ensuring device safety.
Product Description
Infineon IRLML5203TRPBF is a HEXFET Series P-Channel MOSFET tailored for efficient power and load management in electronics and industrial control systems. Featuring a maximum continuous drain current of 3 A and a drain source voltage rating of 30 V, this device supports reliable operation within demanding environments.
The device is housed in a space-saving 3-Pin SOT-23 package and offers low on-resistance, minimizing power dissipation and heating during switching cycles. Its enhancement mode channel enhances switching precision and performance.
Operating comfortably between temperatures of -55°C and +150°C, this MOSFET is ideal for portable electronics, battery management systems, and advanced automation control applications.
The thermal capability allowing 1.25 W power dissipation ensures stable performance and device longevity under maximum load conditions. The package dimensions of 3.04 mm by 1.4 mm by 1.02 mm support integration in compact PCBs and systems.
High-performance HEXFET Series suitable for power management applications. Low on-resistance of 165 milliohms to reduce power loss and improve efficiency. Enhancement mode channel for reliable switching operations. Operates in a wide temperature range from -55°C to +150°C for robust industrial use.
Designed with a maximum power dissipation of 1.25 W to support thermal stability. Compact dimensions of 3.04mm length, 1.4mm width, and 1.02mm height for space-saving PCB design. Maximum gate source voltage rated at -20 to +20 V ensuring device safety.
This MOSFET is highly suitable for applications in industrial, electronic, automotive, and power management contexts, providing efficient load and battery system control. It supports advanced electronics design where performance and compactness are critical.
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Frequently Asked Questions
The maximum continuous drain current for the Infineon IRLML5203TRPBF is 3 A.
This model has a maximum drain-source voltage rating of 30 V.
The dimensions of the SOT-23 package are 3.04 mm in length, 1.4 mm in width, and 1.02 mm in height.
The on-resistance of this MOSFET is 165 milliohms, which helps reduce power loss and improve efficiency.
It operates within a wide temperature range of -55°C to +150°C.
The maximum power dissipation is rated at 1.25 W, supporting thermal stability during operation.
The maximum gate-source voltage is rated at -20 to +20 V, ensuring device safety.
This model uses an enhancement mode channel, which enhances switching precision and performance.
The typical gate charge at Vgs is 9.5 nC.
The pin count for the Infineon IRLML5203TRPBF is 3.
This device is designed for surface mounting.
It is suitable for applications in power management, battery management systems, and industrial control systems.
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