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Infineon HEXFET N-Channel MOSFET 75 A 55 V Enhancement 3-Pin TO-220 IRF2805PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 16.51mm |
| Length | 10.67mm |
| Model | IRF2805PBF |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 75A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 4.7mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 330W |
| Typical Gate Charge Qg @ Vgs | 150nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Supports a maximum continuous drain current of 75 A for high power applications.
- Operates with a voltage rating of 55 V suitable for industrial circuits.
- Features a low on-resistance of 4.7 mΩ to minimize power losses.
- Designed in a 3-pin TO-220 through-hole package for easy mounting.
- Capable of fast switching speeds, enhancing dynamic circuit performance.
- Handles gate-source voltages up to +20 V and -20 V for flexibility.
- Withstands operating temperatures from -55°C to 175°C for reliability in harsh environments.
- Typical gate charge of 150 nC optimizes switching efficiency.
Product Description
Infineon IRF2805PBF HEXFET N-Channel MOSFET is a high-performance power MOSFET designed to deliver excellent efficiency and reliability in various demanding electronic applications.
This device supports a maximum continuous drain current of 75 A and a maximum drain-source voltage of 55 V, making it suitable for high current and voltage industrial environments.
The low on-resistance of 4.7 mΩ reduces conduction losses and improves overall system efficiency. Its 3-pin TO-220 package is compatible with through-hole mounting methods, ensuring easy installation and thermal management.
Designed to handle gate-source voltages ranging from -20 V to +20 V, the MOSFET supports fast switching speeds and repetitive avalanche conditions for dynamic and resilient operation.
The operating temperature range from -55°C to 175°C ensures dependable performance under extreme thermal conditions often encountered in industrial, automotive, and power electronics applications.
Supports a maximum continuous drain current of 75 A for high power applications. Low RDS(on) of 4.7 mΩ reduces power loss during conduction. Fast switching capabilities enable efficient circuit operation. Robust thermal handling with 330 W maximum power dissipation.
3-pin TO-220 package suits through-hole mounting requirements. Capable of withstanding extreme operating temperatures (-55°C to 175°C). Typical gate charge of 150 nC optimizes switching efficiency. Compatible with gate-source voltages of +20 V and -20 V.
Ideal for industrial motor drives, power management systems, and renewable energy solutions. Supports repetitive avalanche energy for operational durability.
This MOSFET finds extensive use in industrial motor drives, automation power management, renewable energy power inverters, and electric vehicle battery management systems, delivering high efficiency and rugged performance.
Explore the full range of Infineon high-performance MOSFETs and semiconductor components at EnvMart for your industrial and electronics system design needs.
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Frequently Asked Questions
This model supports a maximum continuous drain current of 75 A, making it suitable for high power applications.
The maximum drain-source voltage for this MOSFET is 55 V, which is suitable for various industrial circuits.
It features a low on-resistance of 4.7 mΩ, which helps minimize power losses during operation.
This MOSFET is designed in a 3-pin TO-220 through-hole package, allowing for easy mounting.
It can operate within a temperature range of -55°C to 175°C, ensuring reliability in harsh environments.
It can handle gate-source voltages up to +20 V and down to -20 V, providing flexibility for various applications.
The typical gate charge is 150 nC, optimizing switching efficiency for dynamic circuit performance.
This MOSFET can dissipate a maximum power of 330 W, which supports its use in high-power applications.
The dimensions of this model are 16.51 mm in height, 10.67 mm in length, and 4.83 mm in width.
It is ideal for industrial motor drives, power management systems, and renewable energy solutions.
This model is an N-channel enhancement mode MOSFET, designed for high-performance applications.
The country of origin for this MOSFET is India.
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