STMicroelectronics MDmesh M5 N-Channel MOSFET, 42 A, 710 V Enhancement Mode, 3-Pin TO-247 STW57N65M5

STMicroelectronics STW57N65M5 is a high-performance N-Channel MOSFET transistor from the MDmesh M5 series designed for power electronics applications. With a maximum continuous drain current of 42 amperes and a maximum drain-source voltage rating of 710 volts, it is engineered to handle demanding power switching tasks efficiently.

This enhancement mode transistor features a low maximum drain-source resistance of 63 milliohms, reducing conduction losses and improving overall system efficiency in power factor correction (PFC) and pulse-width modulation (PWM) topologies.

The device supports a typical gate charge of 98 nanocoulombs at gate-source voltage, enabling fast switching speeds and reduced power consumption during switching cycles. Its power dissipation capability is up to 250 watts, making it suitable for robust power conversion and control circuits.

Operating temperature ranges from a minimum of -55°C to a maximum of 150°C, ensuring reliable performance in industrial, automotive, and commercial electronic environments. The maximum gate-source voltage rating of ±25 volts provides flexibility in drive voltages and protection margins.

The transistor comes in a 3-pin TO-247 package, designed for through-hole mounting, with compact physical dimensions (Height: 20.15mm, Length: 15.75mm, Width: 5.15mm), which enables reliable integration into printed circuit boards where space and thermal management are critical.

Applications include solar power converters, industrial power supplies, electronic lighting controls, and other high-efficiency power switching systems requiring low conduction losses and high thermal performance.

This MOSFET belongs to the MDmesh M5 series optimized for high-power applications. It features low on-state resistance of 63 milliohms for efficient conduction. Maximum power dissipation is rated at 250 watts, suitable for robust switching.

Typical gate charge is 98 nanocoulombs facilitating low switching losses. Operating temperature ranges from -55°C to 150°C for durable operation. The device supports gate-source voltages between -25V and +25V enhancing control.

Compact TO-247 3-pin package supports through-hole mounting. Manufactured in China for consistent quality. Discover the full range of semiconductor components and Power MOSFETs at EnvMart for reliable industrial and commercial power solutions.