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| Country of Origin | China |
|---|---|
| Brand | STMicroelectronics |
| Height | 15.75mm |
| Length | 10.4mm |
| Model | STP38N65M5 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh M5 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -50°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 30A |
| Maximum Drain Source Voltage Vds | 710V |
| Maximum Drain Source Resistance Rds | 95mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 190W |
| Typical Gate Charge Qg @ Vgs | 71nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.5V |
STMicroelectronics STP38N65M5 is a N-channel MDmesh™ M5 power MOSFET optimized for high power factor correction (PFC) and pulse width modulation (PWM) topologies. This transistor delivers efficient switching with low on-state losses per silicon area combined with a small gate charge, making it ideal for compact, low-energy, and reliable industrial and commercial applications.
With a maximum continuous drain current of 30A and withstand voltage of 710V, the MOSFET suits demanding power switching roles such as solar power converters, electronic lighting controls, and power supplies for consumer products.
The device comes in a 3-pin TO-220 through-hole package, facilitating easy integration into various PCB designs. Featuring a low Rds(on) of 95 milliohms, it ensures minimal conduction losses while the enhancement-mode channel type supports robust and stable operation.
Operating temperature range from -50°C to 150°C enables use in harsh environmental conditions. The typical gate charge of 71nC allows for fast switching speeds, reducing switching losses and improving efficiency in power electronics.
Additional features include a maximum gate-to-source voltage rating of ±25V for device protection and a forward voltage drop of 1.5V. Its compact dimensions (15.75mm height, 4.6mm width, 10.4mm length) make it suitable for space-constrained industrial and laboratory environments.
Maximum continuous drain current of 30A. Maximum drain-source voltage of 710V. Power dissipation of 190W for heavy-duty applications. Through-hole mounting with 3-pin TO-220 package. Low on-state resistance of 95mΩ ensures energy efficiency.
Enhancement mode N-channel operation. Wide operating temperature range from -50°C to 150°C. Gate charge optimized at 71nC for rapid switching. Maximum gate-source voltage rating of ±25V. Compact physical size facilitates diverse mounting scenarios.
This Power MOSFET is well-suited for use in industrial power management, HVAC controls, renewable energy equipment, and advanced electronic devices requiring reliable high-voltage switching. It is designed to meet demanding performance standards in contemporary electronics manufacturing.
Explore more semiconductor and power component solutions at EnvMart to complement your design and manufacturing requirements.
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