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STMicroelectronics MDmesh M5 N-Channel MOSFET, 30 A Current, 710 V Drain Source Voltage, 190 W Power Dissipation STP38N65M5

Category Power MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin China
Brand STMicroelectronics
Height 15.75mm
Length 10.4mm
Model STP38N65M5
Width 4.6mm
Mount Type Through Hole
Series MDmesh M5
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -50°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 30A
Maximum Drain Source Voltage Vds 710V
Maximum Drain Source Resistance Rds 95mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 190W
Typical Gate Charge Qg @ Vgs 71nC
Maximum Gate Source Voltage Vgs -25, +25V
Forward Voltage Vf 1.5V

Key Features

  • Features a maximum continuous drain current of 30A.
  • Has a maximum drain-source voltage rating of 710V.
  • Supports power dissipation up to 190W for robust performance.
  • Utilizes a 3-pin TO-220 package for through-hole mounting.
  • Offers a low on-state resistance of 95mΩ for efficient conduction.
  • Operates with an enhancement mode channel type for reliable switching.
  • Designed for operating temperatures ranging from -50°C to 150°C.
  • Typical gate charge of 71nC at Vgs, supporting fast switching.

Product Description

STMicroelectronics STP38N65M5 is a N-channel MDmesh™ M5 power MOSFET optimized for high power factor correction (PFC) and pulse width modulation (PWM) topologies. This transistor delivers efficient switching with low on-state losses per silicon area combined with a small gate charge, making it ideal for compact, low-energy, and reliable industrial and commercial applications.

With a maximum continuous drain current of 30A and withstand voltage of 710V, the MOSFET suits demanding power switching roles such as solar power converters, electronic lighting controls, and power supplies for consumer products.

The device comes in a 3-pin TO-220 through-hole package, facilitating easy integration into various PCB designs. Featuring a low Rds(on) of 95 milliohms, it ensures minimal conduction losses while the enhancement-mode channel type supports robust and stable operation.

Operating temperature range from -50°C to 150°C enables use in harsh environmental conditions. The typical gate charge of 71nC allows for fast switching speeds, reducing switching losses and improving efficiency in power electronics.

Additional features include a maximum gate-to-source voltage rating of ±25V for device protection and a forward voltage drop of 1.5V. Its compact dimensions (15.75mm height, 4.6mm width, 10.4mm length) make it suitable for space-constrained industrial and laboratory environments.

Maximum continuous drain current of 30A. Maximum drain-source voltage of 710V. Power dissipation of 190W for heavy-duty applications. Through-hole mounting with 3-pin TO-220 package. Low on-state resistance of 95mΩ ensures energy efficiency.

Enhancement mode N-channel operation. Wide operating temperature range from -50°C to 150°C. Gate charge optimized at 71nC for rapid switching. Maximum gate-source voltage rating of ±25V. Compact physical size facilitates diverse mounting scenarios.

This Power MOSFET is well-suited for use in industrial power management, HVAC controls, renewable energy equipment, and advanced electronic devices requiring reliable high-voltage switching. It is designed to meet demanding performance standards in contemporary electronics manufacturing.

Explore more semiconductor and power component solutions at EnvMart to complement your design and manufacturing requirements.

STMicroelectronics MDmesh M5 N-Channel MOSFET, 30 A Current, 710 V Drain Source Voltage, 190 W Power Dissipation STP38N65M5
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Frequently Asked Questions

The maximum continuous drain current for this model is 30A.

It has a maximum drain-source voltage rating of 710V.

This MOSFET supports power dissipation up to 190W.

It utilizes a 3-pin TO-220 package for through-hole mounting.

The on-state resistance is 95mΩ, ensuring efficient conduction.

It operates within a temperature range of -50°C to 150°C.

The typical gate charge is 71nC at Vgs, which supports fast switching.

This model is suitable for applications such as solar power converters, electronic lighting controls, and power supplies for consumer products.

The maximum gate-to-source voltage rating is ±25V.

The dimensions are 15.75mm in height, 4.6mm in width, and 10.4mm in length.

It utilizes an enhancement mode N-channel type for reliable switching.

The forward voltage drop is 1.5V.

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