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| Country of Origin | China |
|---|---|
| Brand | STMicroelectronics |
| Height | 16.4mm |
| Length | 10.4mm |
| Model | STF57N65M5 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh M5 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 42A |
| Maximum Drain Source Voltage Vds | 710V |
| Maximum Drain Source Resistance Rds | 63mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 40W |
| Typical Gate Charge Qg @ Vgs | 98nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.5V |
STMicroelectronics STF57N65M5 is a high-performance N-Channel MOSFET from the MDmesh™ M5 series, engineered for demanding power electronics applications. It supports a maximum continuous drain current of 42 A and a drain-source voltage up to 710 V, making it suitable for use in power factor correction (PFC), pulse width modulation (PWM) circuits, and power supplies.
This device utilizes enhancement mode channel technology, ensuring low on-state resistance of 63 mΩ and low gate charge, which translates to efficient switching and reduced power losses. The MOSFET is housed in a through-hole 3-pin TO-220 package, facilitating effective heat dissipation and ease of assembly in power electronic modules.
It is designed to operate reliably across a wide temperature span from -55°C to +150°C, maintaining consistent performance under thermal stress conditions. The maximum power dissipation rating of 40 W enables it to withstand high power loads.
Additional technical features include a gate-source voltage rating of ±25 V, a typical gate charge of 98 nC, and a forward voltage of 1.5 V, which ensures rapid switching with minimal losses. These specifications make the MDTmesh M5 MOSFET ideal for industrial, commercial, and energy-conscious applications like solar power inverters, lighting controls, and consumer electronics power supplies.
Designed with MDmesh™ M5 for low on-state losses per silicon area. Supports high power IGBT and MOSFET topologies efficiently. Optimized for compact, reliable hard switching in power converters. Suitable for applications including solar energy, power supplies, and lighting.
3-pin Through Hole TO-220 package enables easy integration and thermal management. Wide operating temperature range ensures durability in harsh environments. Low gate charge contributes to energy-efficient switching performance.
This STMicroelectronics MOSFET offers an excellent balance of power handling, efficiency, and robustness for modern power electronic designs. Explore more products in our Power MOSFET category for complementary components and system solutions.
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