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STMicroelectronics MDmesh M5 N-Channel MOSFET, 42 A, 710 V Enhancement Mode, 3-Pin TO-220 STF57N65M5

Category Power MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin China
Brand STMicroelectronics
Height 16.4mm
Length 10.4mm
Model STF57N65M5
Width 4.6mm
Mount Type Through Hole
Series MDmesh M5
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 42A
Maximum Drain Source Voltage Vds 710V
Maximum Drain Source Resistance Rds 63mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 40W
Typical Gate Charge Qg @ Vgs 98nC
Maximum Gate Source Voltage Vgs -25, +25V
Forward Voltage Vf 1.5V

Key Features

  • Designed with MDmesh™ M5 technology for efficient power management.
  • Features an enhancement mode channel for improved switching performance.
  • Compact 3-pin through-hole TO-220 package ensures easy mounting and thermal management.
  • Low on-resistance of 63 mΩ reduces conduction losses and improves efficiency.
  • Maximum power dissipation rated at 40 W for robust operation.
  • Wide operating temperature range from -55°C to 150°C supports diverse applications.
  • Typical gate charge of 98 nC ensures fast switching capabilities.
  • Maximum gate-source voltage tolerance of ±25 V allows reliable gate control.

Product Description

STMicroelectronics STF57N65M5 is a high-performance N-Channel MOSFET from the MDmesh™ M5 series, engineered for demanding power electronics applications. It supports a maximum continuous drain current of 42 A and a drain-source voltage up to 710 V, making it suitable for use in power factor correction (PFC), pulse width modulation (PWM) circuits, and power supplies.

This device utilizes enhancement mode channel technology, ensuring low on-state resistance of 63 mΩ and low gate charge, which translates to efficient switching and reduced power losses. The MOSFET is housed in a through-hole 3-pin TO-220 package, facilitating effective heat dissipation and ease of assembly in power electronic modules.

It is designed to operate reliably across a wide temperature span from -55°C to +150°C, maintaining consistent performance under thermal stress conditions. The maximum power dissipation rating of 40 W enables it to withstand high power loads.

Additional technical features include a gate-source voltage rating of ±25 V, a typical gate charge of 98 nC, and a forward voltage of 1.5 V, which ensures rapid switching with minimal losses. These specifications make the MDTmesh M5 MOSFET ideal for industrial, commercial, and energy-conscious applications like solar power inverters, lighting controls, and consumer electronics power supplies.

Designed with MDmesh™ M5 for low on-state losses per silicon area. Supports high power IGBT and MOSFET topologies efficiently. Optimized for compact, reliable hard switching in power converters. Suitable for applications including solar energy, power supplies, and lighting.

3-pin Through Hole TO-220 package enables easy integration and thermal management. Wide operating temperature range ensures durability in harsh environments. Low gate charge contributes to energy-efficient switching performance.

This STMicroelectronics MOSFET offers an excellent balance of power handling, efficiency, and robustness for modern power electronic designs. Explore more products in our Power MOSFET category for complementary components and system solutions.

STMicroelectronics MDmesh M5 N-Channel MOSFET, 42 A, 710 V Enhancement Mode, 3-Pin TO-220 STF57N65M5
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Frequently Asked Questions

The STF57N65M5 supports a maximum continuous drain current of 42 A.

This model has a maximum drain-source voltage rating of 710 V.

The on-resistance of the STF57N65M5 is 63 mΩ, which helps reduce conduction losses.

The typical gate charge for the STF57N65M5 is 98 nC, allowing for fast switching capabilities.

It operates reliably across a wide temperature range from -55°C to +150°C.

The maximum power dissipation for this unit is rated at 40 W.

The STF57N65M5 is housed in a 3-pin TO-220 package, facilitating easy mounting and thermal management.

The maximum gate-source voltage tolerance for this model is ±25 V.

The forward voltage of the STF57N65M5 is 1.5 V.

This device features an enhancement mode N-channel configuration.

The dimensions of the STF57N65M5 are 10.4 mm in length, 4.6 mm in width, and 16.4 mm in height.

This MOSFET is suitable for applications such as power factor correction (PFC), pulse width modulation (PWM) circuits, and power supplies.

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