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Nexperia Silicon Junction Common Cathode Switching Diode, 225 mA, 200 V, 3-Pin SOT-23 BAV23C,215

Category Switching Diodes Brand Nexperia Condition New

Specifications

Country of Origin China
Brand Nexperia
Height 1.1mm
Length 3mm
Model BAV23C,215
Width 1.4mm
Mount Type Surface
Series BAV23C
Maximum Operating Temperature 150°C
Package Type SOT-23
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Power Dissipation Pd 350mW
Diode Configuration Common Cathode
Peak Non-Repetitive Forward Surge Current Ifsm 9A
Maximum Forward Voltage Vf 1.25V
Peak Reverse Recovery Time trr 50ns
Maximum Forward Current If 225mA
Maximum Peak Reverse Repetitive Voltage Vrrm 200V

Key Features

  • Supports customized high-density circuit designs.
  • Features low leakage and high-voltage capability.
  • Offers high switching speed for efficient operation.
  • Exhibits low capacitance suitable for sensitive circuits.
  • Package type SOT-23 with 3 pins for compact PCB mounting.
  • Maximum power dissipation of 350 mW ensures reliable performance.
  • Operates safely between -65°C to 150°C temperature range.
  • Minimum peak reverse recovery time of 50 ns minimizes switching losses.

Product Description

Nexperia BAV23C,215 is a silicon junction common cathode switching diode designed for efficient surface mount applications. Its 225 mA maximum forward current and 200 V maximum reverse voltage rating make it ideal for low power switching circuits.

This diode supports customized high-density circuit designs featuring low leakage current and high-voltage capability. It provides high switching speeds with a peak reverse recovery time of only 50 nanoseconds, enabling fast signal processing.

Housed in a compact SOT-23 package with 3 pins, it offers ease of assembly on modern PCBs. The device can dissipate up to 350 mW of power safely, operating reliably over a temperature range from -65°C to +150°C, suitable for industrial and commercial electronics.

Other important features include a peak non-repetitive forward surge current of 9 A and a maximum forward voltage of 1.25 V, ensuring robust performance under transient conditions. Its small size (3 mm x 1.4 mm x 1.1 mm) supports miniaturized circuit designs.

Supports customized high-density circuit designs. Features low leakage and high-voltage capabilities. High switching speed with 50 ns reverse recovery time. Low capacitance ideal for sensitive applications. Surface mount SOT-23 package with 3 pins.

Maximum power dissipation: 350 mW. Operational temperature range from -65°C to 150°C. Peak surge current rating of 9 A. Maximum forward voltage of 1.25 V. Compact dimensions: 3 mm length, 1.4 mm width, 1.1 mm height.

This diode is widely used in industrial, electronics manufacturing, power management, and consumer electronics applications requiring reliable small signal switching components. Its robust specifications and compact form factor make it versatile for various electronic assembly lines and repair operations.

Explore more advanced silicon junction Switching Diodes and related components in the Discrete Semiconductors category at EnvMart.

Nexperia Silicon Junction Common Cathode Switching Diode, 225 mA, 200 V, 3-Pin SOT-23 BAV23C,215
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Frequently Asked Questions

The maximum forward current rating is 225 mA.

It can handle a maximum reverse voltage of 200 V.

The peak reverse recovery time is 50 ns, which helps minimize switching losses.

The dimensions of the SOT-23 package are 3 mm in length, 1.4 mm in width, and 1.1 mm in height.

The maximum power dissipation is 350 mW.

It operates safely between -65°C and 150°C.

This diode uses a common cathode configuration.

The peak non-repetitive forward surge current rating is 9 A.

The maximum forward voltage is 1.25 V.

It supports surface mounting, making it suitable for modern PCB designs.

It is commonly used in industrial electronics, power management, and consumer electronics applications that require reliable small signal switching.

It features low leakage current, high-voltage capability, and high switching speed, making it suitable for high-density circuit designs.

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