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Nexperia Bipolar Transistor 2 A NPN 50 V 3-Pin DPAK MJD2873-QJ
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | MJD2873-QJ |
| Mount Type | Surface |
| Series | MJD2873-Q |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 50V |
| Minimum DC Current Gain hFE | 120 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 6V |
| Automotive Standard | AEC-Q101 |
| Maximum DC Collector Current Idc | 2A |
| Transistor Configuration | NPN |
Key Features
- Designed for surface mounting in TO-252 (DPAK) plastic package.
- High thermal power dissipation capability ensures efficient operation.
- Low collector emitter saturation voltage minimizes power loss.
- Fast switching speeds enhance performance in switching applications.
- Qualified to AEC-Q101 automotive standards for reliability.
- Supports a minimum DC current gain (hFE) of 120.
- Operating temperature range from -55°C to 150°C.
- Meets RoHS compliance for environmental safety.
Product Description
Nexperia MJD2873-QJ Bipolar Transistor is a robust high-power NPN transistor packaged in a surface-mounted TO-252 (DPAK) plastic enclosure designed for efficient heat dissipation and reliable performance. It supports a collector current of up to 2 A and a maximum collector emitter voltage rating of 50 V, making it suitable for various electronic circuits requiring reliable switching and amplification.
This transistor features low collector emitter saturation voltage, contributing to less heat generation during operation and improved energy efficiency. Its fast switching speeds make it ideal for high-frequency electronic applications, including automotive systems and industrial controllers.
The device is qualified to AEC-Q101 automotive standards, ensuring high reliability and suitability for challenging environments. It is RoHS compliant, supporting environmentally conscious manufacturing practices.
The MJD2873-QJ features a minimum DC current gain (hFE) of 120, a maximum emitter base voltage (VEBO) of 6 V, and operates reliably within the temperature range of -55°C to 150°C. Its 3-pin design and surface mount package facilitate compact and efficient PCB integration.
Applications include industrial automation, automotive electronics, power management, and general-purpose amplification and switching tasks in demanding environments. Designed for surface mounting in TO-252 (DPAK) plastic package.
High thermal power dissipation capability ensures efficient operation. Low collector emitter saturation voltage minimizes power loss. Fast switching speeds enhance performance in switching applications. Qualified to AEC-Q101 automotive standards for reliability.
Supports a minimum DC current gain (hFE) of 120. Operating temperature range from -55°C to 150°C. Meets RoHS compliance for environmental safety. Compatible with automotive and industrial applications needing high efficiency.
Compact 3-pin configuration suitable for PCB integration.
This product is a reliable choice for engineers and designers looking for efficient, durable, and automotive-certified bipolar transistors. Browse more in the Bipolar Transistor category at EnvMart for comprehensive semiconductor solutions.
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Frequently Asked Questions
This model supports a maximum DC collector current of 2 A.
The maximum collector emitter voltage (Vceo) rating is 50 V.
It operates reliably within a temperature range of -55°C to 150°C.
This transistor is packaged in a TO-252 (DPAK) plastic enclosure, suitable for surface mounting.
It supports a minimum DC current gain (hFE) of 120.
Yes, it meets RoHS compliance and is qualified to AEC-Q101 automotive standards for reliability.
The maximum emitter base voltage (VEBO) is 6 V.
It is suitable for applications in industrial automation, automotive electronics, power management, and general-purpose amplification and switching tasks.
This model features a 3-pin configuration, facilitating compact PCB integration.
This is an NPN bipolar transistor designed for efficient operation in various electronic circuits.
It has a high thermal power dissipation capability, ensuring efficient operation and low collector emitter saturation voltage to minimize power loss.
The country of origin for this product is India.
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