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Infineon N-Channel MOSFET 25 A Continuous Current 250 V Drain Source Voltage TO-252 Package IPD600N25N3GATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.41mm |
| Length | 6.73mm |
| Model | IPD600N25N3GATMA1 |
| Width | 7.47mm |
| Mount Type | Surface |
| Series | IPD600N25N3 G |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 5 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 25A |
| Maximum Drain Source Voltage Vds | 250V |
| Maximum Drain Source Resistance Rds | 60mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 136W |
| Typical Gate Charge Qg @ Vgs | 22nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 900mV |
Key Features
- Supports sustained continuous drain current of 25 amperes.
- Maximum drain-source voltage rated at 250 volts for robust operation.
- Features a low 60 milliohm drain-source resistance to reduce conduction losses.
- Typical gate charge of 22 nanocoulombs ensures efficient switching control.
- Forward voltage of 0.9 volts minimizes diode conduction losses.
- Maximum power dissipation capability of 136 watts for high power handling.
- Wide operating temperature range from -55°C to 175°C for versatile use environments.
- Housed in a compact 5-pin TO-252 surface-mount package.
Product Description
Infineon IPD600N25N3GATMA1 is a high-voltage N-Channel MOSFET designed for power switching and conversion in compact surface-mounted assemblies. It supports a maximum continuous drain current of 25 amperes and a maximum drain-source voltage of 250 volts, making it suitable for demanding high-voltage applications.
This device features a low on-resistance of 60 milliohms, reducing conduction losses and improving overall efficiency in power circuits. The typical gate charge of 22 nanocoulombs enables effective switching control with minimal energy loss. Additionally, it has a forward voltage of 0.9 volts, which minimizes power loss across the intrinsic diode.
The MOSFET can safely dissipate up to 136 watts of power and operate reliably in a wide temperature range from -55°C to 175°C, accommodating both cold start and high-temperature environments. Supplied in a 5-pin TO-252 surface-mount package, it permits ease of integration on dense electronic boards.
Gate-source voltage must not exceed 20 volts to avoid damaging the MOSFET gate. The device is ideal for use in DC-DC converter power stages, motor-drive inverter switches, switch-mode power supplies for primary switching, battery management, power distribution, and high-voltage relay or solenoid drivers.
Widely applied in industrial, automotive, and commercial electronic circuits, this MOSFET delivers reliable performance for efficient power management. Supports sustained continuous drain current of 25 amperes. Maximum drain-source voltage rated at 250 volts for robust operation.
Features a low 60 milliohm drain-source resistance to reduce conduction losses. Typical gate charge of 22 nanocoulombs ensures efficient switching control. Forward voltage of 0.9 volts minimizes diode conduction losses. Maximum power dissipation capability of 136 watts for high power handling.
Wide operating temperature range from -55°C to 175°C for versatile use environments. Housed in a compact 5-pin TO-252 surface-mount package. Gate-source voltage maximum limit is 20 volts to prevent overstress. Ideal for DC-DC converters, motor drives, switch-mode power supplies, and battery management.
Explore additional Infineon semiconductor components and MOSFET options at EnvMart for your industrial and commercial electronic needs.
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Frequently Asked Questions
The maximum continuous drain current of this model is 25 amperes.
This MOSFET has a maximum drain-source voltage rating of 250 volts.
It features a low drain-source resistance of 60 milliohms, which helps reduce conduction losses.
The typical gate charge for this MOSFET is 22 nanocoulombs, ensuring efficient switching control.
The forward voltage is 0.9 volts, which minimizes diode conduction losses.
It can safely dissipate up to 136 watts of power.
The operating temperature range is from -55°C to 175°C, allowing for versatile use in various environments.
It is housed in a compact 5-pin TO-252 surface-mount package.
The maximum gate-source voltage must not exceed 20 volts to prevent damage to the gate.
It is suitable for applications such as DC-DC converters, motor-drive inverter switches, and switch-mode power supplies.
The dimensions are 6.73mm in length, 7.47mm in width, and 2.41mm in height.
This model is an N-channel enhancement mode MOSFET.
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