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Infineon StrongIRFET N-Channel MOSFET 120A 40V Enhancement Mode 3-Pin TO-220 IRFB7446PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 16.51mm |
| Length | 10.67mm |
| Model | IRFB7446PBF |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | StrongIRFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 120A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 3.3mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 99W |
| Typical Gate Charge Qg @ Vgs | 93nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 900mV |
Key Features
- Maximum continuous drain current of 120 amperes for high power handling.
- Low on-resistance Rds(on) of 3.3 milliohms to minimize conduction losses.
- Supports operating temperatures from -55°C up to 175°C for robust performance.
- Through-hole TO-220 package with 3 pins facilitates easy mounting and replacement.
- Maximum power dissipation of 99 watts enables sustained operation under load.
- Wide gate-source voltage range from -20V to +20V for flexible switching control.
- Typical gate charge of 93 nanocoulombs ensures efficient switching speed.
- Device optimized for motor drives, power tools, inverters, and battery management systems.
Product Description
Infineon IRFB7446PBF StrongIRFET N-Channel MOSFET is a high-performance transistor built for industrial, automotive, and power electronics applications. It features a maximum continuous drain current of 120A and a drain-source voltage rating of 40V, suitable for demanding switching and amplification tasks.
This enhancement mode MOSFET is housed in a 3-pin TO-220 through-hole package, allowing easy integration and durability. Its low drain-source resistance of 3.3mΩ reduces conduction losses, making it highly efficient for power conversion and motor control.
The device withstands operating temperatures ranging from -55°C to 175°C, providing reliable operation in extreme environments common in industrial and automotive sectors. Maximum power dissipation capability is 99 watts, enabling it to operate under significant load currents.
Key electrical characteristics include a gate-source voltage range of -20V to +20V and a typical gate charge of 93nC, allowing fast and effective switching performance. This MOSFET is part of Infineon’s StrongIRFET family, known for ruggedness against avalanche and dynamic voltage stresses.
Typical applications include motor drives, power tools, inverter circuits, battery management systems, and other industrial low-frequency uses where efficiency and durability are critical. The product does not have automotive standards certification but delivers robust performance tailored for professional engineering designs.
Maximum continuous drain current of 120 amperes for high power handling. Low on-resistance Rds(on) of 3.3 milliohms to minimize conduction losses. Supports operating temperatures from -55°C up to 175°C for robust performance.
Through-hole TO-220 package with 3 pins facilitates easy mounting and replacement. Maximum power dissipation of 99 watts enables sustained operation under load. Wide gate-source voltage range from -20V to +20V for flexible switching control.
Typical gate charge of 93 nanocoulombs ensures efficient switching speed. Device optimized for motor drives, power tools, inverters, and battery management systems. Browse our wide catalog of Infineon semiconductor devices at EnvMart for efficient electronic component solutions.
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Frequently Asked Questions
The maximum continuous drain current of this model is 120 amperes, allowing for high power handling in various applications.
This MOSFET has a maximum drain-source voltage rating of 40 volts, suitable for demanding switching tasks.
The on-resistance (Rds(on)) of this unit is 3.3 milliohms, which helps minimize conduction losses during operation.
It supports operating temperatures from -55°C to 175°C, ensuring reliable performance in extreme environments.
The typical gate charge is 93 nanocoulombs, which contributes to efficient switching speed.
It is housed in a 3-pin TO-220 through-hole package, facilitating easy mounting and replacement.
The maximum power dissipation of this model is 99 watts, allowing it to sustain operation under significant load.
This MOSFET has a gate-source voltage range of -20V to +20V, providing flexibility in switching control.
The dimensions of this model are 16.51mm in height, 10.67mm in length, and 4.83mm in width.
This device is optimized for applications such as motor drives, power tools, inverters, and battery management systems.
It features an N-channel type, which is common for enhancement mode MOSFETs used in various electronic applications.
The country of origin for this MOSFET is India.
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