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Infineon StrongIRFET N-Channel MOSFET, 195 A, 40 V Enhancement Mode, 3-Pin TO-247 Package IRFP7430PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 20.7mm |
| Length | 15.87mm |
| Model | IRFP7430PBF |
| Width | 5.31mm |
| Mount Type | Through Hole |
| Series | StrongIRFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 195A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 1.3mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 366W |
| Typical Gate Charge Qg @ Vgs | 460nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Enhancement mode MOSFET with 3-pin TO-247 package for through-hole mounting.
- Low drain-source resistance of 1.3 milliohms ensures high efficiency.
- Maximum power dissipation rating of 366 W supports robust thermal performance.
- Operating temperature range from -55°C up to 175°C for demanding environments.
- Typical gate charge of 460 nC at gate-source voltage, enabling fast switching.
- Channel type is N with StrongIRFET series optimized for high current capability.
- Forward voltage drop is 1.2 V ensuring low conduction losses.
- Reliability suitable for industrial power applications like motor drives and inverters.
Product Description
Infineon IRFP7430PBF StrongIRFET N-Channel MOSFET is a high-performance discrete semiconductor device optimized for applications requiring low on-resistance and high current capacity.
This 3-pin device is housed in a TO-247 package suitable for through-hole mounting and features an enhancement-mode channel with an N-type configuration. With a maximum continuous drain current of 195 A and maximum drain-source voltage of 40 V, it is ideal for industrial motor drives, power tools, inverters, and battery management systems.
The MOSFET’s low drain-source resistance of 1.3 milliohms and maximum power dissipation of 366 W contribute to improved efficiency and thermal management. Operating within a wide temperature range from -55°C to 175°C, the device withstands harsh industrial environments.
Its typical gate charge of 460 nC at the specified gate-source voltage enables rapid switching performance, while forward voltage of 1.2 V minimizes conduction losses. The StrongIRFET series emphasizes ruggedness and durability making it suitable for dynamic dv/dt and avalanche ruggedness conditions.
Physical dimensions of approximately 20.7 mm in height, 15.87 mm in length, and 5.31 mm width fit standard industrial component footprints.
Set provides a reliable semiconductor solution tailored for industrial, automotive, and power management applications demanding robustness and high efficiency. It supports enhanced power density, protection features, and electrical performance.
Enhancement mode MOSFET with 3-pin TO-247 through-hole package. Maximum continuous drain current: 195 A. Maximum drain-source voltage: 40 V. Low Rds(on): 1.3 milliohms. Maximum power dissipation: 366 W. Operating temperature range: -55°C to 175°C.
Gate charge typical: 460 nC. Forward voltage: 1.2 V. Dimensions: Height 20.7 mm, Length 15.87 mm, Width 5.31 mm. Discover more semiconductor solutions in the MOSFET category at EnvMart for your industrial and electronic component needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 195 A.
This MOSFET has a maximum drain-source voltage rating of 40 V.
It features a low drain-source resistance of 1.3 milliohms.
The maximum power dissipation rating is 366 W.
The typical gate charge is 460 nC at the specified gate-source voltage.
It operates within a temperature range of -55°C to 175°C.
The dimensions are approximately 20.7 mm in height, 15.87 mm in length, and 5.31 mm in width.
It comes in a TO-247 package suitable for through-hole mounting.
The forward voltage drop is 1.2 V, which helps minimize conduction losses.
This model features an N-channel configuration.
It is suitable for industrial motor drives, power tools, inverters, and battery management systems.
The maximum gate-source voltage is -20 V to +20 V.
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