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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.4mm |
| Length | 10.1mm |
| Model | IPT013N08NM5LFATMA1 |
| Width | 10.58mm |
| Mount Type | Surface |
| Series | IPT |
| Maximum Operating Temperature | 150°C |
| Package Type | HSOF-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 333A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 1.3mΩ |
| Maximum Power Dissipation Pd | 278W |
| Typical Gate Charge Qg @ Vgs | 158nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Infineon IPT013N08NM5LFATMA1 is a high-current N-channel MOSFET designed for demanding industrial and power conversion applications. It features a maximum continuous drain current rating of 333A and a drain-to-source voltage rating of 80V, making it ideal for mid-voltage systems that require efficient power switching and management.
The device utilizes an 8-pin HSOF-8 surface mount package that provides compact form factor with dimensions 10.1mm length, 10.58mm width, and 2.4mm height, suitable for modern printed circuit board designs. With a low on-resistance of 1.3 milliohms, it reduces conduction losses, thereby improving power efficiency during operation.
This MOSFET supports a wide ambient temperature range from -55°C to 150°C, allowing deployment in harsh thermal environments such as industrial cooling systems and power supplies. Its maximum power dissipation of 278W gives thermal headroom for continuous operation in demanding conditions.
The typical gate charge of 158nC ensures predictable switching behavior, aiding in reliable control of power electronics circuits. The maximum allowable gate-to-source voltage is 20V, which allows for safe driving of the device without damage.
Typical industrial applications include high-current DC-DC converters, motor drives, traction inverters, power distribution modules within server infrastructures, and high-power battery management systems.
Designed for heavy load handling with 333A continuous drain current. Supports mid-voltage applications with 80V maximum drain-to-source voltage. Low 1.3mΩ Rds(on) reduces conduction losses for efficient operation. Maximum power dissipation of 278W ensures thermal headroom.
Typical gate charge of 158nC enables predictable switching behavior. Operating temperature range extends from -55°C to 150°C for harsh environments. Compact dimensions of 10.1mm length, 10.58mm width, and 2.4mm height support PCB footprint planning.
Surface-mount mount type simplifies assembly on printed circuit boards. Not rated as automotive standard but suitable for industrial power applications.
Infineon MOSFETs are widely used in industrial, manufacturing, power supply, and electronic system applications. Browse more semiconductor and MOSFET products at EnvMart for reliable power management components.
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