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Infineon N-Channel MOSFET, 333 A Continuous Drain Current, 80 V Drain Source Voltage, 8-Pin HSOF-8 IPT013N08NM5LFATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 2.4mm
Length 10.1mm
Model IPT013N08NM5LFATMA1
Width 10.58mm
Mount Type Surface
Series IPT
Maximum Operating Temperature 150°C
Package Type HSOF-8
Minimum Operating Temperature -55°C
Pin Count 8
Channel Type N
Maximum Continuous Drain Current Id 333A
Maximum Drain Source Voltage Vds 80V
Maximum Drain Source Resistance Rds 1.3mΩ
Maximum Power Dissipation Pd 278W
Typical Gate Charge Qg @ Vgs 158nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1V

Key Features

  • Designed for heavy load handling with 333A continuous drain current.
  • Supports mid-voltage applications with 80V maximum drain-to-source voltage.
  • Low 1.3mΩ Rds(on) reduces conduction losses for efficient operation.
  • Maximum power dissipation of 278W ensures thermal headroom.
  • Typical gate charge of 158nC enables predictable switching behavior.
  • Operating temperature range extends from -55°C to 150°C for harsh environments.
  • Compact dimensions of 10.1mm length, 10.58mm width, and 2.4mm height support PCB footprint planning.
  • Surface-mount mount type simplifies assembly on printed circuit boards.

Product Description

Infineon IPT013N08NM5LFATMA1 is a high-current N-channel MOSFET designed for demanding industrial and power conversion applications. It features a maximum continuous drain current rating of 333A and a drain-to-source voltage rating of 80V, making it ideal for mid-voltage systems that require efficient power switching and management.

The device utilizes an 8-pin HSOF-8 surface mount package that provides compact form factor with dimensions 10.1mm length, 10.58mm width, and 2.4mm height, suitable for modern printed circuit board designs. With a low on-resistance of 1.3 milliohms, it reduces conduction losses, thereby improving power efficiency during operation.

This MOSFET supports a wide ambient temperature range from -55°C to 150°C, allowing deployment in harsh thermal environments such as industrial cooling systems and power supplies. Its maximum power dissipation of 278W gives thermal headroom for continuous operation in demanding conditions.

The typical gate charge of 158nC ensures predictable switching behavior, aiding in reliable control of power electronics circuits. The maximum allowable gate-to-source voltage is 20V, which allows for safe driving of the device without damage.

Typical industrial applications include high-current DC-DC converters, motor drives, traction inverters, power distribution modules within server infrastructures, and high-power battery management systems.

Designed for heavy load handling with 333A continuous drain current. Supports mid-voltage applications with 80V maximum drain-to-source voltage. Low 1.3mΩ Rds(on) reduces conduction losses for efficient operation. Maximum power dissipation of 278W ensures thermal headroom.

Typical gate charge of 158nC enables predictable switching behavior. Operating temperature range extends from -55°C to 150°C for harsh environments. Compact dimensions of 10.1mm length, 10.58mm width, and 2.4mm height support PCB footprint planning.

Surface-mount mount type simplifies assembly on printed circuit boards. Not rated as automotive standard but suitable for industrial power applications.

Infineon MOSFETs are widely used in industrial, manufacturing, power supply, and electronic system applications. Browse more semiconductor and MOSFET products at EnvMart for reliable power management components.

Infineon N-Channel MOSFET, 333 A Continuous Drain Current, 80 V Drain Source Voltage, 8-Pin HSOF-8 IPT013N08NM5LFATMA1
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Frequently Asked Questions

The maximum continuous drain current of this model is 333A, making it suitable for heavy load handling applications.

This MOSFET supports a maximum drain-to-source voltage of 80V, suitable for mid-voltage applications.

The dimensions of the HSOF-8 package are 10.1mm in length, 10.58mm in width, and 2.4mm in height.

The on-resistance (Rds(on)) of this model is 1.3 milliohms, which helps reduce conduction losses during operation.

The typical gate charge for this device is 158nC, which enables predictable switching behavior.

This MOSFET operates within a temperature range of -55°C to 150°C, allowing it to function in harsh environments.

The maximum power dissipation is 278W, providing thermal headroom for continuous operation.

This model utilizes a surface mount type, simplifying assembly on printed circuit boards.

The maximum allowable gate-to-source voltage for this MOSFET is 20V, ensuring safe operation without damage.

Typical applications include high-current DC-DC converters, motor drives, traction inverters, and power distribution modules.

This model features an 8-pin configuration, which is standard for its package type.

The country of origin for this MOSFET is India.

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