onsemi General Purpose 1 kV 4 A Through Hole DO-201AD Diode MUR4100EG

onsemi MUR4100EG is a high-performance general purpose diode engineered for reliability and efficiency in electronic circuits requiring ultrafast switching and robust voltage handling. This 2-pin diode package (DO-201AD) is designed for through hole mounting, facilitating ease of integration in various semiconductor applications.

With a maximum continuous forward current of 4 A and a peak reverse repetitive voltage of 1 kV, the MUR4100EG effectively handles demanding power rectification tasks. Its ultrafast peak reverse recovery time of 100 ns reduces switching losses, making it well-suited for power supply, industrial, and electronic manufacturing use cases.

The diode exhibits a peak forward voltage of 1.85 V, balancing conduction efficiency and power dissipation. Its peak non-repetitive forward surge rating of 70 A allows transient handling during startup or fault conditions, enhancing circuit protection.

The component operates reliably over a broad temperature range from -65°C to 175°C, suitable for harsh industrial and laboratory environments. Its compact physical dimensions of 9.5 mm height and length, along with 5.3 mm diameter and width, support space-constrained PCB designs.

This single diode configuration is optimized for general purpose rectification, providing stable electrical performance with a low peak reverse current leakage of 900 μA. No automotive approval certifications apply, confirming its use primarily in standard industrial and electronic component assemblies.

onsemi's MUR4100EG diode is a robust choice for applications in power electronics, industrial machinery, consumer electronics, and HVAC systems, offering dependable switching and current rectification capabilities.

This diode is designed for through hole mounting applications. It features a maximum forward voltage of 1.85 V for efficient rectification. The peak non-repetitive forward surge current is rated at 70 A. Operating temperature ranges from -65°C to 175°C for high reliability.

The peak reverse recovery time is 100 ns, supporting ultrafast switching. Compact dimensions include 9.5 mm height and length, with 5.3 mm diameter and width. The diode configuration is single, suitable for discrete semiconductor use.

Peak reverse current is limited to 900 μA ensuring minimal leakage. Explore further onsemi semiconductor diode solutions at EnvMart for seamless industrial and electronic component procurement.

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