onsemi 40 V 3 A Schottky Barrier Diode Through Hole DO-201AD Package 1N5822G

onsemi 1N5822G Schottky Barrier Diode is a high-performance discrete semiconductor device designed for low voltage, high-frequency rectification. Featuring a peak reverse repetitive voltage of 40 volts and a continuous forward current rating of 3 amps, this diode excels in applications requiring efficient forward voltage drop and fast switching.

This diode comes housed in a durable DO-201AD through hole package, facilitating ease of mounting and robust physical durability with an epoxy moulded case providing stress protection. Its lightweight design is well suited to compact electronic assemblies, weighing approximately 11.7 mg.

Technical features include a maximum forward voltage of 950 mV and a very fast peak reverse recovery time of 1.6 nanoseconds. The device supports a peak non-repetitive forward surge current of 80 amps, enabling it to withstand transient conditions without damage. Operating temperature ranges from -65°C to +125°C make it appropriate for industrial, power supply, and electronic equipment in harsh environments.

The diode has a single diode configuration with 2 pins, dimensional specifications of about 9.5 mm length and height, 5.3 mm diameter, and 0.45 mm width. It is lead-free and compatible with automated PCB assembly processes, making it ideal for modern manufacturing techniques.

Applications include power rectification, freewheeling diodes in inductive loads, polarity protection, and other high-frequency switching uses in industrial and electronic systems, including power supplies, battery chargers, and motor drive circuits.

Through hole mount type suitable for PCB integration. Compact DO-201AD epoxy moulded package ensures lightweight and durability. Maximum forward voltage of 950 mV providing efficient low voltage drop operation. Peak non-repetitive forward surge current of 80 A for transient protection.

Operates reliably from -65°C to 125°C for demanding environments. Ultra-fast peak reverse recovery time of 1.6 ns ensures high-frequency switching capability. Low peak reverse current of 20 mA minimizes leakage and power loss.

Physical dimensions approximately 9.5 mm length and height, 5.3 mm diameter. Designed for industrial, power supply, and high-frequency rectification applications. Lead-free and suitable for automated board assembly processes.

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