STMicroelectronics SCT N-Channel MOSFET, 60 A, 1.2 kV Enhancement Mode, 3-Pin Hip-247 Package SCTW60N120G2

STMicroelectronics SCTW60N120G2 is a silicon carbide (SiC) N-Channel MOSFET developed using advanced 2nd generation SiC MOSFET technology by STMicroelectronics. It is engineered for demanding industrial and power conversion applications requiring efficient high-voltage operation.

This device is capable of handling a maximum continuous drain current of 60 A and withstands a drain-source voltage of 1.2 kV, making it suitable for high power switching in electronic circuits. The 3-pin Hip-247 through-hole package ensures robust mechanical stability and ease of integration.

With a maximum power dissipation of 389 W and wide operating temperature range from -55°C to 200°C, it supports harsh industrial environments. The low on-resistance (73 mΩ max) minimizes conduction losses, improving overall efficiency.

The MOSFET features a fast intrinsic body diode that enhances switching performance and reduces losses. The typical gate charge of 94 nC facilitates fast switching speeds with minimal energy consumption, crucial for power supply and motor control applications.

Its gate-source voltage is rated up to 18 V and the forward voltage drop is approximately 3 V, balancing control and conduction characteristics. The device is compliant with UL standards and meets the automotive AEC-Q101 quality standard, suitable for automotive and industrial markets.

Common applications include switching mode power supplies, DC-DC converters, industrial motor control systems, and other high-voltage power electronics applications requiring reliability and efficiency.

Features a maximum continuous drain current of 60 A for high power applications. Supports a maximum drain-source voltage of 1.2 kV enabling high-voltage switching. Constructed with 3 pins in a Hip-247 through-hole mounting package.

Operates at high junction temperatures up to 200°C for robust performance. Offers low on-resistance with a maximum Rds(on) of 73 mΩ for efficient power conduction. Includes an intrinsic fast body diode enhancing switching speed and reliability.

Typical gate charge is low at 94 nC, optimizing switching efficiency. Designed with an enhancement-type N-channel for improved control and stability. Maximum gate-source voltage rating is 18 V protecting gate integrity. Complies with UL standards and automotive AEC-Q101 certification ensuring quality and safety.

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