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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 11.17mm |
| Length | 10.36mm |
| Model | IPP075N15N3 |
| Width | 4.57mm |
| Mount Type | Through Hole |
| Series | IPP075N15N3 G |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 7.7mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 300W |
| Typical Gate Charge Qg @ Vgs | 70nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Infineon IPP075N15N3 G N-Channel MOSFET is a high-performance semiconductor device optimized for power electronics applications requiring high current capacity and efficient switching characteristics. It features a robust 150 V drain-source voltage rating and supports continuous drain current up to 100 A, making it ideal for demanding environments.
The device is housed in a 4-pin TO-220 package with through-hole mounting, facilitating easy installation in various industrial and commercial setups. Its low on-resistance of 7.7 milliohm significantly reduces power losses and heat generation, contributing to overall system efficiency.
With an enhancement mode channel and a maximum gate-source voltage of 20 V, the MOSFET provides precise control and fast switching speeds supported by its typical gate charge of 70 nC. It also offers a high maximum power dissipation rating of 300 W, ensuring excellent thermal performance under heavy loads.
The IPP075N15N3 operates reliably across a broad temperature range (-55°C to 175°C), suitable for use in automotive, industrial, and power management applications. Its compact physical dimensions allow integration in space-constrained designs. The device is halogen free, aligning with environmental safety standards.
Maximum continuous drain current of 100 A. 150 V maximum drain-source voltage rating. 4-pin TO-220 package and through-hole mount type. Low Rds(on) of 7.7 mΩ for energy efficiency. Enhancement mode channel operation with max gate-source voltage of 20 V.
Maximum power dissipation of 300 W for thermal durability. Operating temperature from -55°C to 175°C. Typical gate charge of 70 nC for quick switching. Compact size: 11.17 mm height, 10.36 mm length, 4.57 mm width. Halogen free for environmental compliance.
This MOSFET is suitable for applications such as synchronous rectification in AC-DC switched-mode power supplies, motor control in domestic vehicles and power tools, isolated DC-DC converters for telecom/datacom, circuit breakers in 48 V systems, Class D audio amplifiers, and uninterruptible power supplies (UPS). It enables designers to achieve better efficiency, higher power density, and reduced board space.
Explore more power semiconductor devices on EnvMart for all your industrial, laboratory, and electronic design requirements.
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