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Infineon IPP075N15N3 G N-Channel MOSFET 100A 150V Enhancement Mode 4-Pin TO-220 IPP075N15N3

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 11.17mm
Length 10.36mm
Model IPP075N15N3
Width 4.57mm
Mount Type Through Hole
Series IPP075N15N3 G
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 4
Channel Type N
Maximum Continuous Drain Current Id 100A
Maximum Drain Source Voltage Vds 150V
Maximum Drain Source Resistance Rds 7.7mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 300W
Typical Gate Charge Qg @ Vgs 70nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1V

Key Features

  • Maximum continuous drain current of 100 A for robust power handling.
  • Drain-source voltage rated at 150 V suitable for medium voltage applications.
  • TO-220 package with 4 pins and through-hole mounting for easy integration.
  • Low on-resistance of 7.7 milliohm enhances energy efficiency.
  • Enhanced mode channel operation with a maximum gate-source voltage of 20 V.
  • High maximum power dissipation of 300 W enables reliable thermal management.
  • Wide operating temperature range from -55°C to 175°C ensures durability under harsh environments.
  • Typical gate charge of 70 nC supports fast switching performance.

Product Description

Infineon IPP075N15N3 G N-Channel MOSFET is a high-performance semiconductor device optimized for power electronics applications requiring high current capacity and efficient switching characteristics. It features a robust 150 V drain-source voltage rating and supports continuous drain current up to 100 A, making it ideal for demanding environments.

The device is housed in a 4-pin TO-220 package with through-hole mounting, facilitating easy installation in various industrial and commercial setups. Its low on-resistance of 7.7 milliohm significantly reduces power losses and heat generation, contributing to overall system efficiency.

With an enhancement mode channel and a maximum gate-source voltage of 20 V, the MOSFET provides precise control and fast switching speeds supported by its typical gate charge of 70 nC. It also offers a high maximum power dissipation rating of 300 W, ensuring excellent thermal performance under heavy loads.

The IPP075N15N3 operates reliably across a broad temperature range (-55°C to 175°C), suitable for use in automotive, industrial, and power management applications. Its compact physical dimensions allow integration in space-constrained designs. The device is halogen free, aligning with environmental safety standards.

Maximum continuous drain current of 100 A. 150 V maximum drain-source voltage rating. 4-pin TO-220 package and through-hole mount type. Low Rds(on) of 7.7 mΩ for energy efficiency. Enhancement mode channel operation with max gate-source voltage of 20 V.

Maximum power dissipation of 300 W for thermal durability. Operating temperature from -55°C to 175°C. Typical gate charge of 70 nC for quick switching. Compact size: 11.17 mm height, 10.36 mm length, 4.57 mm width. Halogen free for environmental compliance.

This MOSFET is suitable for applications such as synchronous rectification in AC-DC switched-mode power supplies, motor control in domestic vehicles and power tools, isolated DC-DC converters for telecom/datacom, circuit breakers in 48 V systems, Class D audio amplifiers, and uninterruptible power supplies (UPS). It enables designers to achieve better efficiency, higher power density, and reduced board space.

Explore more power semiconductor devices on EnvMart for all your industrial, laboratory, and electronic design requirements.

Infineon IPP075N15N3 G N-Channel MOSFET 100A 150V Enhancement Mode 4-Pin TO-220 IPP075N15N3
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Frequently Asked Questions

The maximum continuous drain current for this model is 100 A, allowing for robust power handling in various applications.

This MOSFET has a maximum drain-source voltage rating of 150 V, making it suitable for medium voltage applications.

It is housed in a 4-pin TO-220 package, which allows for through-hole mounting and easy integration into circuits.

The on-resistance (Rds(on)) of this model is 7.7 milliohm, which enhances energy efficiency by reducing power losses.

The maximum power dissipation for this device is 300 W, ensuring reliable thermal management under heavy loads.

It operates reliably within a temperature range of -55°C to 175°C, making it suitable for harsh environments.

The typical gate charge is 70 nC, which supports fast switching performance in power electronics applications.

The maximum gate-source voltage for this MOSFET is 20 V, allowing for precise control during operation.

This model has dimensions of 11.17 mm in height, 10.36 mm in length, and 4.57 mm in width.

It is suitable for applications such as synchronous rectification in AC-DC power supplies, motor control, and isolated DC-DC converters.

Yes, the IPP075N15N3 is halogen-free, aligning with environmental safety standards.

This model features an N-channel type, which is commonly used for enhancement mode operation in power applications.

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