Infineon N-Channel Power MOSFET 80 A 80 V Enhancement Mode 8-Pin TDSON Surface Mount BSC070N10NS5ATMA1

Infineon BSC070N10NS5ATMA1 is a high-current N-Channel Power MOSFET with an 80 A maximum continuous drain current and an 80 V drain-source voltage. It features enhancement mode channel operation and is housed in an 8-pin TDSON surface mount package that facilitates compact PCB mounting, making it suitable for advanced power stage designs in industrial, telecommunications, and computing applications.

This MOSFET offers a very low on-resistance of 10.2 milliohms, significantly reducing conduction losses and improving efficiency in power conversion and switching circuits. The device can tolerate a maximum gate-source voltage of 20 V which protects the gate drive circuitry while a typical gate charge of 30 nC assures efficient switching speed and minimal switching losses.

Designed to operate in demanding environments, it reliably functions from -55 °C up to 150 °C, allowing it to be used in thermal extremes encountered in industrial and commercial equipment. The power device supports a peak power dissipation of 83 W, providing good thermal robustness for high current workloads.

With compact dimensions of 5.49 mm length, 6.35 mm width, and 1.1 mm height, the package enables space-saving surface mount solutions. This component suits synchronous buck converter stages, motor-drive half-bridge assemblies, high-current DC-DC converters, server power distribution modules, and telecom rectification or switchgear applications.

Its robust conduction properties combined with a compact and surface mount compatible design make it a versatile power component for contemporary power management and conversion challenges in electronics and electrical engineering.

Features an 8-pin TDSON surface mount package for compact PCB integration. Utilizes enhancement mode N-channel technology requiring positive gate drive. Very low on-resistance of 10.2 milliohms reduces conduction losses.

Supports a maximum gate-source voltage of 20 V for reliable gate drive protection. Handles peak power dissipation up to 83 W ensuring robust thermal management. Operates in a wide temperature range from -55°C to 150°C for demanding environments.

Typical gate charge of 30 nC enables efficient switching control. Compact physical dimensions with 5.49 mm length, 6.35 mm width, and 1.1 mm height. Ideal for synchronous buck converters, motor drives, telecom rectification, and server power modules.

Designed for surface mount power stages requiring high current capacity and compact form factor. Explore a wide range of power semiconductor components in the Infineon series for industrial, telecommunication, and high-performance computing power applications on EnvMart.