$0.39
$0.38
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon N-Channel MOSFET 85 A, 40 V Enhancement, 8-Pin TDSON Package BSC050N04LSGATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 5.49mm |
| Model | BSC050N04LSGATMA1 |
| Width | 6.35mm |
| Mount Type | Surface |
| Series | BSC050N04LS G |
| Maximum Operating Temperature | 150°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 85A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 7.2mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 57W |
| Typical Gate Charge Qg @ Vgs | 36nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 870mV |
Key Features
- Maximum continuous drain current of 85 A.
- Drain source voltage rating of 40 V.
- Surface mount package with 8-pin TDSON form factor.
- Enhancement mode channel for efficient operation.
- Low drain source resistance of 7.2 milliohms.
- Maximum power dissipation rated at 57 W.
- Operational temperature range from -55°C to 150°C.
- Typical gate charge of 36 nC at gate voltage of 10 V.
Product Description
Infineon BSC050N04LSGATMA1 is a high-performance N-Channel MOSFET optimized for synchronous rectification in switched mode power supplies (SMPS), commonly used in servers, desktop power systems, and industrial applications.
This MOSFET features a maximum continuous drain current of 85 A and a maximum drain-source voltage of 40 V, providing robust power handling capabilities suitable for fast switching DC-DC converters and motor control systems.
The device comes in an 8-pin TDSON package suitable for surface mount technology, which enhances thermal management and power density. Its enhancement mode channel offers system efficiency improvements with reduced paralleling requirements and overall system cost reduction.
Key electrical characteristics include a low maximum drain-source resistance of 7.2 milliohms, maximum power dissipation of 57 W, and an operational temperature range from -55°C to 150°C, ensuring reliable performance under demanding conditions.
The typical gate charge is measured at 36 nanoCoulombs at a gate voltage of 10 V, with a maximum gate source voltage of 20 V. The forward voltage is approximately 870 millivolts.
Physical dimensions facilitate integration in compact electronic circuits, with a height of 1.1 mm, length of 5.49 mm, and width of 6.35 mm. This component is compliant with standard manufacturing and quality controls and has no specific approvals or automotive certifications.
Industrial applications of this MOSFET include power conversion, industrial motor drives, telecommunications equipment, and computing peripherals. Its optimized performance makes it suitable for high-efficiency power management solutions in commercial and industrial sectors.
This product is offered new and originates from India unless otherwise specified. Ideal for designers and manufacturers seeking high reliability and efficiency in semiconductor components.
Explore more MOSFET devices and semiconductor components at EnvMart to find solutions tailored to your industrial and electronic engineering requirements. Maximum continuous drain current of 85 A. Drain source voltage rating of 40 V.
Surface mount 8-pin TDSON package. Enhancement mode channel operation. Low drain-source resistance of 7.2 mΩ. Maximum power dissipation of 57 W. Operational temperature range from -55°C to 150°C. Typical gate charge of 36 nC at Vgs.
Maximum gate source voltage of 20 V. Compact dimensions: 1.1 mm height, 5.49 mm length, 6.35 mm width.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 85 A.
This MOSFET has a drain-source voltage rating of 40 V.
It comes in an 8-pin TDSON package suitable for surface mount technology.
The operational temperature range is from -55°C to 150°C.
The typical gate charge is 36 nC at a gate voltage of 10 V.
The maximum power dissipation for this MOSFET is rated at 57 W.
The maximum drain-source resistance is 7.2 milliohms.
The forward voltage is approximately 870 millivolts.
The dimensions are 1.1 mm in height, 5.49 mm in length, and 6.35 mm in width.
The maximum gate-source voltage is 20 V.
This model is suitable for applications in power conversion, industrial motor drives, telecommunications equipment, and computing peripherals.
It uses an enhancement mode channel for efficient operation.
Related Products
$23.16
$20.22
-12.7%
Other Products from this brand
$19.84
$19.24
-3%
New
Recently Viewed Products
$0.39
$0.38
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent