Infineon Type P-Channel MOSFET, 31 A Continuous Drain Current, 55 V Drain-Source Voltage, Enhancement Mode IRFR5305TRLPBF

Infineon IRFR5305TRLPBF Type P-Channel MOSFET is a high-performance discrete semiconductor designed to handle continuous drain currents up to 31 A and high drain-source voltages of up to 55 V. Packaged in a TO-252 D-Pak form factor, this device supports surface mounting with assembly methods including vapor phase, infrared, or wave soldering, making it ideal for automated manufacturing processes.

This MOSFET operates in enhancement mode and is fully avalanche rated, ensuring reliable performance in demanding industrial, power management, and electronic circuit applications. The device offers a maximum power dissipation of 110 watts, facilitating use in power switching, motor controls, and load management.

Thermal performance is excellent, supporting a minimum operating temperature down to -55°C and maximum operating temperature up to 175°C, suitable for harsh environmental conditions. The low maximum drain-source resistance (Rds(on)) of 65 milliohms improves efficiency by minimizing conduction losses.

The typical gate charge of 63 nanocoulombs helps reduce switching losses, enhancing overall efficiency at high switching frequencies. The device supports a maximum gate-source voltage of 20 volts, providing safe margin for gate drive signals.

Dimensions of 6.73 mm length, 7.49 mm width, and 2.39 mm height allow compact PCB layouts without compromising thermal dissipation. Additionally, Infineon's lead-free manufacturing process aligns with modern environmental compliance requirements.

This MOSFET is widely applicable in power electronics, industrial automation, automotive electronics that do not require automotive specific qualifications, and other commercial electronic designs requiring robust, efficient switching elements.

Designed for surface mounting with 3-pin TO-252 package. High continuous drain current rating of 31 A supports power-intensive loads. Maximum drain-source voltage of 55 V withstands demanding voltage conditions. Enhancement mode channel offers fast switching capabilities.

Operation across wide temperature range from -55°C to 175°C. Low Rds(on) reduces conduction losses improving energy efficiency. Fully avalanche rated for high reliability in switched circuits. Lead-free compliance supports environmentally friendly production.

Compact size for flexible PCB footprint designs. Typical gate charge is low to optimize switching efficiency. Explore our extensive Electronics & Electricals category at EnvMart for more high-quality MOSFETs and discrete semiconductor products from Infineon and leading manufacturers.