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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 20.15mm |
| Length | 15.75mm |
| Model | STW77N65M5 |
| Width | 5.15mm |
| Mount Type | Through Hole |
| Series | MDmesh M5 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 69A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 38mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 400W |
| Typical Gate Charge Qg @ Vgs | 185nC |
| Maximum Gate Source Voltage Vgs | 25V |
| Forward Voltage Vf | 1.5V |
STMicroelectronics STW77N65M5 is a N-Channel MDmesh™ M5 series power MOSFET designed to deliver robust performance in high power, energy-conscious switching applications. This MOSFET supports a maximum continuous drain current of 69 amps and can tolerate drain-source voltages up to 650 volts. Packaged in a 3-pin TO-247 format, it is engineered for efficient conduction with a low 38 milliohm on-resistance and low gate charge of 185 nC at Vgs, which helps reduce switching losses.
The device features enhancement channel mode for improved reliability and supports power dissipation up to 400 watts. It is able to operate safely across a wide temperature range from -55°C to 150°C, making it suitable for industrial, power supply, motor control, and solar inverter applications requiring rugged and compact semiconductors.
The MOSFET’s mechanical specifications include a height of 20.15 mm, length of 15.75 mm, and width of 5.15 mm. Its through-hole mount type provides stable installation in diverse circuit designs. The device is optimized for pulse width modulation (PWM) and power factor correction (PFC) topologies where low on-state loss and fast switching speeds are critical.
Applications include power management in consumer electronics, industrial power supplies, renewable energy systems like solar inverters, and electronic lighting controls where efficient energy conversion and thermal management are essential.
Supports 69 A continuous drain current with 650 V drain-source voltage. Low on-resistance of 38 mΩ enables reduced conduction losses. Enhancement mode channel ensures reliable switching operation. High power dissipation rated at 400 W for demanding applications.
Wide operating temperature from -55°C to 150°C for robust performance. Compact TO-247 package simplifies integration and thermal management. Low typical gate charge improves switching efficiency and speed. Designed for power factor correction and PWM applications.
Suited for industrial, consumer, and renewable energy electronics. Through-hole mount provides mechanical robustness and thermal dissipation. Explore more industrial semiconductor solutions like this in the Power MOSFET category at EnvMart for your advanced electronics and power conversion projects.
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