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STMicroelectronics MDmesh M5 N-Channel MOSFET 69 A 650 V Enhancement 3-Pin TO-247 STW77N65M5

Category Power MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 20.15mm
Length 15.75mm
Model STW77N65M5
Width 5.15mm
Mount Type Through Hole
Series MDmesh M5
Maximum Operating Temperature 150°C
Package Type TO-247
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 69A
Maximum Drain Source Voltage Vds 650V
Maximum Drain Source Resistance Rds 38mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 400W
Typical Gate Charge Qg @ Vgs 185nC
Maximum Gate Source Voltage Vgs 25V
Forward Voltage Vf 1.5V

Key Features

  • Supports a maximum continuous drain current of 69 amps.
  • Rated for a maximum drain-source voltage of 650 volts.
  • Features a low 38 milliohm on-resistance for efficient conduction.
  • Designed with enhancement channel mode for reliable switching.
  • Capable of dissipating up to 400 watts power.
  • Operates securely within temperature range of -55°C to 150°C.
  • Typical gate charge is 185 nanocoulombs at Vgs.
  • Maximum gate-source voltage rating is 25 volts.

Product Description

STMicroelectronics STW77N65M5 is a N-Channel MDmesh™ M5 series power MOSFET designed to deliver robust performance in high power, energy-conscious switching applications. This MOSFET supports a maximum continuous drain current of 69 amps and can tolerate drain-source voltages up to 650 volts. Packaged in a 3-pin TO-247 format, it is engineered for efficient conduction with a low 38 milliohm on-resistance and low gate charge of 185 nC at Vgs, which helps reduce switching losses.

The device features enhancement channel mode for improved reliability and supports power dissipation up to 400 watts. It is able to operate safely across a wide temperature range from -55°C to 150°C, making it suitable for industrial, power supply, motor control, and solar inverter applications requiring rugged and compact semiconductors.

The MOSFET’s mechanical specifications include a height of 20.15 mm, length of 15.75 mm, and width of 5.15 mm. Its through-hole mount type provides stable installation in diverse circuit designs. The device is optimized for pulse width modulation (PWM) and power factor correction (PFC) topologies where low on-state loss and fast switching speeds are critical.

Applications include power management in consumer electronics, industrial power supplies, renewable energy systems like solar inverters, and electronic lighting controls where efficient energy conversion and thermal management are essential.

Supports 69 A continuous drain current with 650 V drain-source voltage. Low on-resistance of 38 mΩ enables reduced conduction losses. Enhancement mode channel ensures reliable switching operation. High power dissipation rated at 400 W for demanding applications.

Wide operating temperature from -55°C to 150°C for robust performance. Compact TO-247 package simplifies integration and thermal management. Low typical gate charge improves switching efficiency and speed. Designed for power factor correction and PWM applications.

Suited for industrial, consumer, and renewable energy electronics. Through-hole mount provides mechanical robustness and thermal dissipation. Explore more industrial semiconductor solutions like this in the Power MOSFET category at EnvMart for your advanced electronics and power conversion projects.

STMicroelectronics MDmesh M5 N-Channel MOSFET 69 A 650 V Enhancement 3-Pin TO-247 STW77N65M5
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Frequently Asked Questions

The STMicroelectronics STW77N65M5 supports a maximum continuous drain current of 69 amps.

This model is rated for a maximum drain-source voltage of 650 volts.

It features a low on-resistance of 38 milliohms, which helps in reducing conduction losses.

This MOSFET can dissipate up to 400 watts of power, making it suitable for demanding applications.

It operates securely within a temperature range of -55°C to 150°C.

The typical gate charge is 185 nanocoulombs at Vgs.

The maximum gate-source voltage rating for this model is 25 volts.

This MOSFET is packaged in a 3-pin TO-247 format, which simplifies integration and thermal management.

The dimensions are as follows: height 20.15 mm, length 15.75 mm, and width 5.15 mm.

It uses a through-hole mount type, providing mechanical robustness in circuit designs.

This model is suitable for applications in power management, industrial power supplies, renewable energy systems, and electronic lighting controls.

The STW77N65M5 utilizes an N-channel type, designed for enhancement mode operation.

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