STMicroelectronics MDmesh M5 N-Channel MOSFET, 13 A, 550 V Enhancement Mode, 3-Pin TO-252 STD18N55M5

STMicroelectronics STD18N55M5 is a high-performance N-Channel MDmesh M5 MOSFET designed for industrial and electronic applications requiring efficient power switching. It is packaged in a compact 3-pin TO-252 surface mount package, which simplifies integration into power electronics circuits.

With a maximum continuous drain current of 13 A and a drain-source voltage rating of 550 V, this MOSFET is suitable for power factor correction (PFC), pulse-width modulation (PWM) operations, and other high-efficiency switching tasks. The device supports an enhancement mode channel and features a low typical gate charge (31 nC), allowing for minimized switching losses and efficient control in power supplies and converters.

Its robust construction supports a maximum power dissipation of 90 W and operates reliably over a wide temperature range from -55°C to 150°C, making it suitable for demanding environments including solar power converters, electronic lighting systems, and general power electronics. The device’s low on-resistance of 240 mΩ ensures minimal conduction losses, improving overall circuit efficiency.

Technical dimensions include a height of 2.4 mm, length of 6.6 mm, and width of 6.2 mm, providing a compact footprint ideal for densely packed circuit boards. The maximum gate-source voltage of 25 V allows for strong gate control and stability during operation.

This MOSFET belongs to the MDmesh M5 series by STMicroelectronics, known for optimizing high-power electronic topologies with low on-state losses per silicon area and reliable hard switching. It is recommended for industrial, laboratory, manufacturing, power supply, and HVAC applications, delivering high energy efficiency and compact design in modern electronic solutions.

Features an enhancement mode channel type for efficient switching. Maximum power dissipation up to 90 W ensures robust usage. Low typical gate charge of 31 nC reduces switching losses. Compact dimensions: 6.6 mm length, 6.2 mm width, and 2.4 mm height.

Designed for surface mount applications with a 3-pin TO-252 package. Wide operating temperature range from -55°C up to 150°C for reliability. Maximum gate-source voltage of 25 V for stable operation. Low on-resistance at 240 mΩ to optimize conduction efficiency.

Forward voltage of 1.5 V for effective forward conduction. Explore EnvMart’s category for Power MOSFET devices to find compatible components from leading manufacturers.