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STMicroelectronics MDmesh M5 N-channel Power MOSFET 13 A 550 V Enhancement 3-Pin TO-220 STP18N55M5

Category Power MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 15.75mm
Length 10.4mm
Model STP18N55M5
Width 4.6mm
Mount Type Through Hole
Series MDmesh M5
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 13A
Maximum Drain Source Voltage Vds 550V
Maximum Drain Source Resistance Rds 240mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 90W
Typical Gate Charge Qg @ Vgs 31nC
Maximum Gate Source Voltage Vgs -25, +25V
Forward Voltage Vf 1.5V

Key Features

  • The MOSFET features a maximum continuous drain current of 13 amperes.
  • Maximum drain-to-source voltage rating is 550 volts suitable for high voltage applications.
  • It has a low on-state resistance of 240 milliohms ensuring efficient operation.
  • Maximum power dissipation rating is 90 watts for reliable thermal performance.
  • Designed with enhancement mode N-channel for easy gate control.
  • Robust gate-to-source voltage range of -25 to +25 volts protects against voltage spikes.
  • Typical gate charge is 31 nanocoulombs facilitating faster switching speeds.
  • Operating temperature range spans from -55°C to 150°C for extended reliability.

Product Description

STMicroelectronics STP18N55M5 is an N-channel MDmesh™ M5 series Power MOSFET designed for high-power applications such as power factor correction (PFC), pulse width modulation (PWM) topologies, and energy-conscious electronic circuits.

With a maximum continuous drain current of 13 amperes and a drain-to-source voltage rating of 550 volts, it handles demanding industrial loads efficiently.

The device features a low on-state resistance of 240 milliohms and a typical gate charge of 31 nanocoulombs, contributing to low conduction losses and high-speed switching capacity, making it ideal for compact and reliable hard switching applications.

This MOSFET supports an operating temperature range from -55°C up to 150°C, ensuring durability under harsh environments. Its 3-pin TO-220 package allows through-hole mounting for straightforward assembly in various power electronics and control systems.

The MOSFET supports a gate-to-source voltage range from -25 to +25 volts for robust drive tolerance. Rated power dissipation of 90 watts facilitates heat management in high load scenarios. It is particularly suited for solar power converters, consumer product power supplies, and electronic lighting control circuits.

Engineered for applications demanding efficient power conversion with minimal losses. STMicroelectronics maintains stringent quality standards ensuring new, reliable components. This Power MOSFET is a vital component for industrial, commercial, and solar energy applications requiring high power switching and conversion efficiency.

Explore more components in the Power MOSFET category at EnvMart to suit all your high-power semiconductor needs.

STMicroelectronics MDmesh M5 N-channel Power MOSFET 13 A 550 V Enhancement 3-Pin TO-220 STP18N55M5
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Frequently Asked Questions

The maximum continuous drain current for this model is 13 amperes.

It has a maximum drain-to-source voltage rating of 550 volts, making it suitable for high voltage applications.

The on-state resistance is 240 milliohms, which contributes to efficient operation.

The maximum power dissipation rating is 90 watts, allowing for reliable thermal performance.

The typical gate charge is 31 nanocoulombs, facilitating faster switching speeds.

The operating temperature range spans from -55°C to 150°C, ensuring extended reliability under various conditions.

This model comes in a 3-pin TO-220 package, allowing for through-hole mounting.

It supports a gate-to-source voltage range from -25 to +25 volts, providing robust drive tolerance.

It is particularly suited for power factor correction (PFC), pulse width modulation (PWM) topologies, and energy-conscious electronic circuits.

The height is 15.75 mm and the width is 4.6 mm.

This MOSFET is an N-channel enhancement mode device, designed for easy gate control.

The country of origin for this model is India.

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