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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.5mm |
| Length | 4.5mm |
| Model | BSS192PH6327FTSA1 |
| Width | 2.5mm |
| Mount Type | Surface |
| Series | SIPMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-89 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 190mA |
| Maximum Drain Source Voltage Vds | 250V |
| Maximum Drain Source Resistance Rds | 20Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1W |
| Typical Gate Charge Qg @ Vgs | 4.9nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.1V |
Infineon BSS192PH6327FTSA1 SIPMOS Type P-Channel MOSFET is a high-voltage, low-current enhancement-mode transistor designed specifically for surface-mount power switching applications. With a maximum continuous drain current of 190 mA and a maximum drain-source voltage of 250 V, this component is ideal for sensitive electronic control circuits requiring efficient switching and minimal power loss.
This device features a maximum drain-source resistance of 20Ω, which reduces conduction losses in low-current circuits. The typical gate charge of 4.9 nC at specified gate voltages ensures predictable switching performance, while the ±20 V maximum gate-source voltage enables straightforward gate drive design. It can dissipate up to 1 W of power, allowing it to function effectively in densely packed circuits.
The BSS192PH6327FTSA1 operates reliably over a broad temperature range from -55°C to 150°C, making it suitable for demanding industrial and automotive environments. Its compact SOT-89 surface mount package with three pins is specifically designed for efficient PCB layout and automated assembly.
This MOSFET is automotive-grade, conforming to the AEC-Q101 qualification standard, which indicates conformity with rigorous industry stress tests for use in vehicle electronics. Typical applications include automotive sensor power path switching, low-power reverse polarity protection, high-voltage battery management systems, and compact power distribution modules on circuit boards.
This MOSFET features a maximum continuous drain current of 190 mA for low current load control. It supports a maximum drain-source voltage of 250 V, enabling high voltage switching applications. The 20Ω maximum drain-source resistance reduces conduction losses effectively.
The device offers a typical gate charge of 4.9 nC at specified gate voltage for reliable switching behavior. It has a gate-source voltage limit of ±20 V for straightforward gate drive designs. Maximum power dissipation is 1 W, allowing thermal management in compact circuit layouts.
The component operates reliably within a wide temperature range of -55°C to 150°C. Supplied in a space-saving SOT-89 surface mount package with 3 pins suitable for automated PCB assembly. It conforms to the automotive AEC-Q101 standard, ensuring suitability for automotive electronics.
Explore further Infineon MOSFET products and related components in the Electronics & Electricals category at EnvMart for trusted industrial-grade solutions.
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