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Infineon SIPMOS Type P-Channel MOSFET 190 mA 250 V Enhancement 3-Pin SOT-89 BSS192PH6327FTSA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 1.5mm
Length 4.5mm
Model BSS192PH6327FTSA1
Width 2.5mm
Mount Type Surface
Series SIPMOS
Maximum Operating Temperature 150°C
Package Type SOT-89
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id 190mA
Maximum Drain Source Voltage Vds 250V
Maximum Drain Source Resistance Rds 20Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 1W
Typical Gate Charge Qg @ Vgs 4.9nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -1.1V

Key Features

  • This MOSFET features a maximum continuous drain current of 190 mA for low current load control.
  • It supports a maximum drain-source voltage of 250 V, enabling high voltage switching applications.
  • The 20Ω maximum drain-source resistance reduces conduction losses effectively.
  • The device offers a typical gate charge of 4.9 nC at specified gate voltage for reliable switching behavior.
  • It has a gate-source voltage limit of ±20 V for straightforward gate drive designs.
  • Maximum power dissipation is 1 W, allowing thermal management in compact circuit layouts.
  • The component operates reliably within a wide temperature range of -55°C to 150°C.
  • Supplied in a space-saving SOT-89 surface mount package with 3 pins suitable for automated PCB assembly.

Product Description

Infineon BSS192PH6327FTSA1 SIPMOS Type P-Channel MOSFET is a high-voltage, low-current enhancement-mode transistor designed specifically for surface-mount power switching applications. With a maximum continuous drain current of 190 mA and a maximum drain-source voltage of 250 V, this component is ideal for sensitive electronic control circuits requiring efficient switching and minimal power loss.

This device features a maximum drain-source resistance of 20Ω, which reduces conduction losses in low-current circuits. The typical gate charge of 4.9 nC at specified gate voltages ensures predictable switching performance, while the ±20 V maximum gate-source voltage enables straightforward gate drive design. It can dissipate up to 1 W of power, allowing it to function effectively in densely packed circuits.

The BSS192PH6327FTSA1 operates reliably over a broad temperature range from -55°C to 150°C, making it suitable for demanding industrial and automotive environments. Its compact SOT-89 surface mount package with three pins is specifically designed for efficient PCB layout and automated assembly.

This MOSFET is automotive-grade, conforming to the AEC-Q101 qualification standard, which indicates conformity with rigorous industry stress tests for use in vehicle electronics. Typical applications include automotive sensor power path switching, low-power reverse polarity protection, high-voltage battery management systems, and compact power distribution modules on circuit boards.

This MOSFET features a maximum continuous drain current of 190 mA for low current load control. It supports a maximum drain-source voltage of 250 V, enabling high voltage switching applications. The 20Ω maximum drain-source resistance reduces conduction losses effectively.

The device offers a typical gate charge of 4.9 nC at specified gate voltage for reliable switching behavior. It has a gate-source voltage limit of ±20 V for straightforward gate drive designs. Maximum power dissipation is 1 W, allowing thermal management in compact circuit layouts.

The component operates reliably within a wide temperature range of -55°C to 150°C. Supplied in a space-saving SOT-89 surface mount package with 3 pins suitable for automated PCB assembly. It conforms to the automotive AEC-Q101 standard, ensuring suitability for automotive electronics.

Explore further Infineon MOSFET products and related components in the Electronics & Electricals category at EnvMart for trusted industrial-grade solutions.

Infineon SIPMOS Type P-Channel MOSFET 190 mA 250 V Enhancement 3-Pin SOT-89 BSS192PH6327FTSA1
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Frequently Asked Questions

The maximum continuous drain current for this MOSFET is 190 mA.

It supports a maximum drain-source voltage of 250 V, making it suitable for high voltage switching applications.

The maximum power dissipation is 1 W, allowing for effective thermal management in compact circuit designs.

The typical gate charge is 4.9 nC at specified gate voltages, ensuring reliable switching behavior.

The maximum gate-source voltage limit is ±20 V, facilitating straightforward gate drive designs.

The SOT-89 package has dimensions of 4.5 mm in length, 2.5 mm in width, and 1.5 mm in height.

This MOSFET operates reliably within a wide temperature range of -55°C to 150°C.

The maximum drain-source resistance is 20Ω, which helps to reduce conduction losses effectively.

Yes, it conforms to the AEC-Q101 automotive standard, indicating its suitability for automotive electronics.

This component has 3 pins, designed for surface mounting.

This MOSFET features a P-Channel type, suitable for enhancement mode applications.

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