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Infineon SIPMOS N-Channel MOSFET, 230 mA Maximum Continuous Drain Current, 60 V Drain Source Voltage BSS159NH6327XTSA2
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1mm |
| Length | 2.9mm |
| Model | BSS159NH6327XTSA2 |
| Width | 1.3mm |
| Mount Type | Surface |
| Series | SIPMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 230mA |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 8Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 360mW |
| Typical Gate Charge Qg @ Vgs | 1.4nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Depletion-mode N-Channel MOSFET in 3-pin SOT-23 surface-mount package.
- 230 mA maximum continuous drain current supports low-power applications.
- 60 V maximum drain-source voltage rating enables robust switching.
- 360 mW maximum power dissipation allows for reliable thermal performance.
- Typical gate charge of 1.4 nC supports fast switching transitions.
- Operating temperature range from -55°C to 150°C suits harsh conditions.
- Maximum gate-source voltage rating of ±20 V protects gate integrity.
- Maximum drain-source resistance of 8 Ω provides predictable conduction losses.
Product Description
Infineon BSS159NH6327XTSA2 is a SIPMOS series N-channel MOSFET designed for low-power switching and control functions. It supports a maximum continuous drain current of 230 mA and a drain-source voltage rating of 60 V, making it suitable for automotive and industrial power management applications.
The device features depletion-mode channel operation in a 3-pin SOT-23 surface-mount package, optimizing PCB real estate and enabling efficient automated assembly. With a typical gate charge of 1.4 nC at Vgs, it allows for fast gate voltage transitions, reducing switching losses.
It operates reliably over an extended temperature range from -55 °C to 150 °C, accommodating harsh operating conditions found in engine bays and industrial environments. The MOSFET has a maximum power dissipation of 360 mW, providing thermal robustness for continuous operation.
Its maximum drain-source resistance of 8 Ω enables predictable conduction losses, and the ±20 V maximum gate-source voltage rating ensures protection against gate drive overvoltage. Forward voltage drop is approximately 1.2 V.
Applications include low-current automotive control circuits, onboard power management modules, sensor interface switching, and driving small relays or solenoids. This component is ideal for compact, surface-mounted PCB designs requiring robust voltage handling with minimal board footprint.
This MOSFET is part of Infineon's SIPMOS series, recognized for quality and reliability. It is AEC-Q101 automotive standard qualified, ensuring compatibility with automotive-grade electronic systems. Compact SOT-23 footprint facilitates integration in space-constrained electronic assemblies.
The depletion-mode operation requires careful off-state bias design due to inherent channel conduction at zero gate bias. Designed for applications requiring controlled switching and low conduction losses at modest current levels.
Explore more MOSFET and discrete semiconductor solutions within the Infineon portfolio on EnvMart, catering to demanding industrial, automotive, and electronic component needs.
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Frequently Asked Questions
The maximum continuous drain current for this MOSFET is 230 mA.
It has a maximum drain-source voltage rating of 60 V.
The typical gate charge at Vgs is 1.4 nC, which supports fast switching transitions.
This model operates reliably over a temperature range of -55 °C to 150 °C.
The maximum power dissipation for this device is 360 mW.
The maximum gate-source voltage rating is ±20 V, ensuring protection against gate drive overvoltage.
It comes in a 3-pin SOT-23 surface-mount package.
The maximum drain-source resistance is 8 Ω, which provides predictable conduction losses.
Yes, this MOSFET is AEC-Q101 automotive standard qualified, making it suitable for automotive applications.
The forward voltage drop is approximately 1.2 V.
It is suitable for low-current automotive control circuits, onboard power management modules, and sensor interface switching.
This MOSFET features an N-channel type channel mode, specifically designed for depletion operation.
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