Infineon SIPMOS N-Channel MOSFET 2.9A 60V Enhancement 3-Pin SOT-223 BSP320SH6327XTSA1

Infineon BSP320SH6327XTSA1 SIPMOS N-Channel MOSFET is designed for efficient power management with continuous drain current of 2.9 A and drain-source voltage rating of 60 V in enhancement mode.

Its compact 3-pin SOT-223 surface mount package enables integration into space-constrained electronic circuits. The device is engineered to deliver low power loss with a maximum drain-source resistance of 120 mΩ and forward voltage of 950 mV.

With maximum power dissipation of 1.8 W, it suits applications requiring moderate power handling such as switching regulators, motor controls, and power management circuits in automotive and industrial domains.

The MOSFET supports a wide gate-source voltage range (-20 V to +20 V) providing flexible control options. It is rated for operation from -55°C to 150°C, ensuring reliability under harsh environmental conditions.

Typical gate charge of 9.7 nC facilitates fast switching suitable for high-frequency applications. The device complies with RoHS and AEC-Q101 automotive standards, ensuring quality and safety in critical systems.

Dimensionally, it is 6.5 mm long, 3.5 mm wide, and 1.6 mm tall, making it ideal for compact designs. This MOSFET is widely used in industrial control systems, automotive electronics, power supplies, and consumer electronics.

Its robust design ensures dependable performance in manufacturing, HVAC, and laboratory instrumentation applications. Explore Infineon MOSFETs at EnvMart for quality electronic components fit for diverse semiconductor needs.