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Infineon SIPMOS N-Channel MOSFET 600 V 21 mA Enhancement Mode SOT-23 3-Pin BSS127H6327XTSA2
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1mm |
| Length | 2.9mm |
| Model | BSS127H6327XTSA2 |
| Width | 1.3mm |
| Mount Type | Surface |
| Series | SIPMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 21mA |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 600Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 500mW |
| Typical Gate Charge Qg @ Vgs | 0.65nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 820mV |
| N-Channel MOSFET, 21 mA, 600 V, 3-Pin SOT-23 Infineon BSS127H6327Brand | Infineon |
Key Features
- Housed in a compact 3-pin SOT-23 surface-mount package suitable for PCB assembly.
- Features a low typical gate charge of 0.65 nC enabling efficient switching performance.
- Operates reliably from -55°C up to 150°C, supporting demanding thermal environments.
- Maximum drain-source resistance is 600 Ω reducing off-state leakage currents.
- Rated gate-source voltage of ±20 V ensures compatibility with standard gate-drive circuits.
- Power dissipation capability is 500 mW supporting thermal loading in compact electronic designs.
- Certified to automotive standard AEC-Q101, suitable for automotive and industrial applications.
- Ideal for high-voltage switching, gate-level signal translation, and small-form-factor power-management modules.
Product Description
Infineon BSS127H6327XTSA2 is a SIPMOS N-Channel MOSFET designed for high-voltage switching applications up to 600 V and continuous drain current of 21 mA. It operates in enhancement mode and comes in a 3-pin SOT-23 surface-mount package, making it ideal for compact and space-constrained electronic systems.
This MOSFET features a typical gate charge of 0.65 nC, enabling faster switching with minimal losses. The maximum drain-source resistance of 600 Ω minimizes off-state leakage current, thus improving circuit efficiency and reliability.
It is rated for a gate-source voltage of -20 V to +20 V, allowing it to work compatibly with a range of gate-drive voltages. The power dissipation limit of 500 mW supports thermal management in densely packed PCBs.
The device withstands operating temperatures from -55°C up to 150°C, suitable for harsh industrial, automotive, and power-conversion environments. Qualification to AEC-Q101 automotive standards ensures reliability for sensor and auxiliary circuits in vehicles.
Compact 3-pin SOT-23 surface-mount package for easy PCB integration. High-voltage switching capability with 600 V drain-to-source withstand voltage. Low gate charge for efficient and low-loss switching. Robust operation across a wide temperature range.
Compliance with automotive industry AEC-Q101 standard for quality assurance. Suitable for applications in automotive-grade sensors, switching regulators, and flyback converters. Supports gate-level signal translation and power management in small form factors.
Infineon's SIPMOS BSS127H6327XTSA2 provides a reliable and efficient solution for high-voltage, low-current power switching applications across industrial, automotive, and commercial electronics sectors. Explore the wide range of high-quality MOSFET semiconductors available at EnvMart for your next electronic design.
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Frequently Asked Questions
The maximum drain-source voltage for this model is 600 V, making it suitable for high-voltage switching applications.
This N-Channel MOSFET has a maximum continuous drain current rating of 21 mA.
The typical gate charge for this model is 0.65 nC, which contributes to its efficient switching performance.
The SOT-23 package has dimensions of 2.9 mm in length, 1.3 mm in width, and 1 mm in height.
It operates reliably in a temperature range from -55°C to 150°C, suitable for demanding thermal environments.
The maximum power dissipation capability is 500 mW, supporting thermal management in compact designs.
Yes, it is certified to the AEC-Q101 automotive standard, ensuring reliability for automotive applications.
This model is designed for surface mounting, making it suitable for PCB assembly.
The maximum gate-source voltage is rated at ±20 V, ensuring compatibility with standard gate-drive circuits.
It is suitable for high-voltage switching, gate-level signal translation, and power management in small form factors.
The maximum drain-source resistance for this MOSFET is 600 Ω, which helps reduce off-state leakage currents.
This model has a pin count of 3, consistent with its SOT-23 package design.
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