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Infineon CoolMOS C3 N-Channel MOSFET, 7.3 A, 650 V Enhancement Mode, 3-Pin TO-220 SPA07N60C3XKSA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 9.83mm
Length 10.65mm
Model SPA07N60C3XKSA1
Width 4.85mm
Mount Type Through Hole
Series CoolMOS C3
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 7.3A
Maximum Drain Source Voltage Vds 650V
Maximum Drain Source Resistance Rds 600mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 32W
Typical Gate Charge Qg @ Vgs 21nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.2V

Key Features

  • Features a low typical gate charge of 21 nC at Vgs for efficient switching.
  • Supports a maximum power dissipation of 32 W with operation up to 150°C.
  • Incorporates enhancement mode operation with 3-pin through-hole mounting.
  • Maximum drain-source resistance (Rds) is 600 milliohms, ensuring low conduction losses.
  • Designed for high efficiency and power density applications in power electronics.
  • Compatible with automotive applications but without AEC-Q101 certification.
  • Gate-source voltage tolerance up to ±20 V and forward voltage of 1.2 V.

Product Description

Infineon SPA07N60C3XKSA1 CoolMOS C3 N-Channel MOSFET is a high-performance semiconductor device designed for power switching applications requiring high efficiency and reliability. Featuring a maximum continuous drain current of 7.3 A and a drain-source voltage rating of 650 V, this transistor uses enhancement mode operation and is housed in a 3-pin TO-220 through-hole package suitable for easy integration in power electronics.

The device exhibits a typical gate charge of 21 nC at gate-source voltage, which contributes to rapid switching and low switching losses, making it ideal for use in applications such as power supplies, motor controls, and industrial power management.

With a maximum power dissipation of 32 W and a maximum operating temperature of 150°C, it ensures stable operation under demanding conditions. Its maximum drain-source resistance of 600 milliohms enables efficient conduction with minimal power loss. The device also offers robust gate-source voltage tolerance ±20 V and a forward voltage drop of 1.2 V.

The physical dimensions of the MOSFET are 10.65 mm (length), 9.83 mm (height), and 4.85 mm (width), supporting easy mounting and thermal management. Despite being compatible with automotive use cases, it is not automotive standard qualified.

Low gate charge for efficient switching at 21 nC. High voltage rating of 650 V for robust operation. Through-hole TO-220 package for reliable mounting. Maximum power dissipation up to 32 W for demanding loads. Robust voltage tolerance and low forward voltage.

Suitable for industrial, power management, and electronic component assemblies. Dimensions optimal for integration into power modules.

This Infineon CoolMOS C3 MOSFET is ideal for industrial, laboratory, and power electronics applications requiring high efficiency and durability. It supports enhanced performance in switching power supplies, inverters, and converters within commercial and manufacturing environments.

For more options and complementary power semiconductor products, explore related listings at EnvMart.

Infineon CoolMOS C3 N-Channel MOSFET, 7.3 A, 650 V Enhancement Mode, 3-Pin TO-220 SPA07N60C3XKSA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 7.3 A.

This MOSFET has a maximum drain-source voltage rating of 650 V.

The typical gate charge at gate-source voltage (Vgs) is 21 nC.

It supports a maximum power dissipation of 32 W.

The dimensions of the TO-220 package are 10.65 mm in length, 9.83 mm in height, and 4.85 mm in width.

The maximum operating temperature is 150°C.

It uses a through-hole mounting type.

The maximum drain-source resistance (Rds) is 600 milliohms.

The gate-source voltage tolerance is up to ±20 V.

It is designed for high efficiency and power density applications in power electronics, including power supplies and motor controls.

The forward voltage drop is 1.2 V.

This model is compatible with automotive applications but is not AEC-Q101 certified.

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