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Infineon SIPMOS N-Channel MOSFET, 1.7 A Continuous Drain Current, 100 V Drain Source Voltage, Surface BSP373NH6327XTSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.6mm |
| Length | 6.5mm |
| Model | BSP373NH6327XTSA1 |
| Width | 3.5mm |
| Mount Type | Surface |
| Series | SIPMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 1.7A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 300mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.8W |
| Typical Gate Charge Qg @ Vgs | 6.2nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 820mV |
| N-Channel MOSFET Transistor, 1.7 A, 100 V, 4-Pin SOT-223 Infineon BSP372Brand | Infineon |
Key Features
- Designed for efficient power switching in electronic circuits.
- 300mΩ maximum drain-source resistance reduces conduction losses.
- Supports operation across a wide temperature range from -55°C to 150°C.
- Typical gate charge of 6.2nC enables fast and efficient switching control.
- Complies with automotive AEC-Q101 standard for high reliability.
- Maximum power dissipation of 1.8 W manages thermal stress effectively.
- Allows flexible gate-source voltage from -20 V to +20 V.
- Compact SOT-223 package saves PCB space and supports heat dissipation.
Product Description
Infineon BSP373NH6327XTSA1 SIPMOS N-Channel MOSFET is a high-performance transistor designed for surface-mount power switching and control applications. It features a 1.7 A maximum continuous drain current and a 100 V maximum drain-source voltage, making it suitable for moderate power electronic systems requiring robust performance.
The device operates efficiently due to its low 300mΩ maximum drain-source resistance, reducing conduction losses at the rated current. Its typical gate charge of 6.2nC allows for fast switching control, minimizing energy loss.
It is packaged in a compact 4-pin SOT-223 form factor intended for surface mounting on PCBs, facilitating mechanical stability and good thermal heat dissipation through the tab. The MOSFET is designed to function in a wide ambient temperature range from -55°C up to 150°C, suitable for demanding automotive and industrial environments.
The transistor features a maximum gate-source voltage rating of ±20 V, providing flexibility in gate drive designs. It also maintains a maximum power dissipation of 1.8 W, ensuring reliability under typical operating conditions.
This MOSFET is automotive-graded and complies with the stringent AEC-Q101 qualification, ensuring high quality and reliability for vehicle electronic modules. Typical uses include power management in automotive systems, DC/DC converters, motor driver circuits, telematics units, and battery management applications.
Designed for efficient power switching in electronic circuits. 300mΩ maximum drain-source resistance reduces conduction losses. Supports operation across a wide temperature range from -55°C to 150°C. Typical gate charge of 6.2nC enables fast and efficient switching control.
Complies with automotive AEC-Q101 standard for high reliability. Maximum power dissipation of 1.8 W manages thermal stress effectively. Allows flexible gate-source voltage from -20 V to +20 V. Compact SOT-223 package saves PCB space and supports heat dissipation.
Explore other semiconductor devices and MOSFETs at EnvMart for your industrial and automotive electronic design projects.
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Frequently Asked Questions
The maximum continuous drain current of this model is 1.7 A.
It has a maximum drain-source voltage rating of 100 V.
The maximum power dissipation is 1.8 W, which helps manage thermal stress effectively.
The typical gate charge is 6.2 nC, enabling fast and efficient switching control.
It supports operation across a wide temperature range from -55°C to 150°C.
This model is packaged in a compact 4-pin SOT-223 form factor, suitable for surface mounting.
It complies with the automotive AEC-Q101 standard, ensuring high reliability.
The dimensions are 6.5 mm in length, 3.5 mm in width, and 1.6 mm in height.
The maximum gate-source voltage is ±20 V, allowing for flexible gate drive designs.
It has a maximum drain-source resistance of 300 mΩ, which reduces conduction losses.
Typical applications include power management in automotive systems, DC/DC converters, and motor driver circuits.
This model features a 4-pin configuration.
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