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Infineon OptiMOS 3 N-Channel MOSFET, 49 A, 40 V Enhancement Mode, 8-Pin TDSON Package BSC093N04LSGATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 6.35mm |
| Model | BSC093N04LSGATMA1 |
| Width | 5.35mm |
| Mount Type | Surface |
| Series | OptiMOS 3 |
| Maximum Operating Temperature | 150°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 49A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 13.7mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 8.6nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Supports surface mount technology with 8-pin TDSON package.
- Low on-resistance of 13.7 milliohms for improved performance.
- Enhancement mode channel operation with gate charge of 8.6 nC.
- Operates reliably from -55°C to +150°C for wide temperature stability.
- Maximum power dissipation of 2.5 W suited for thermal management.
- Gate-source voltage range extends from -20 V to +20 V for flexible circuit design.
- Dimensionally compact with length 6.35 mm, width 5.35 mm, and height 1.1 mm.
- Typical forward voltage of 1.2 V for efficient switching.
Product Description
Infineon BSC093N04LSGATMA1 OptiMOS 3 Series is a high-performance N-Channel MOSFET designed for demanding power management and control applications. This semiconductor component supports a maximum continuous drain current of 49 A and a maximum drain-source voltage of 40 V, providing reliable operation in automation, electric vehicle charging systems, motor drives, and power supply conversions.
Its surface mountable 8-pin TDSON package facilitates easy PCB integration in compact equipment and electronic assemblies. With a low on-resistance of 13.7 milliohms and a typical gate charge of 8.6 nC, it ensures fast switching and high efficiency, reducing losses and enhancing thermal stability up to +150°C. This component is built to withstand wide operating temperature ranges from -55°C to +150°C, making it adaptable to harsh and variable environmental conditions.
The enhancement mode channel and a gate-source voltage range from -20 V to +20 V provide design flexibility for varied circuits, while the 2.5 W maximum power dissipation supports robust thermal management strategies. Its compact physical size measures 6.35 mm length by 5.35 mm width and 1.1 mm height, optimized for space-critical industrial and commercial electronic systems.
Applications include power management in robotics, telecommunications, automotive electronics, and industrial control equipment. Infineon's OptiMOS 3 technology delivers excellent energy efficiency and power density in power switching and voltage regulation scenarios.
Supports surface mount integration with 8-pin TDSON packaging. Max continuous drain current: 49 A and voltage: 40 V. Low drain-source resistance for enhanced efficiency. Wide temperature range from -55°C to +150°C ensures durability.
Maximum power dissipation rated at 2.5 W for thermal performance. Gate-source voltage limits between -20 V to +20 V allow flexible circuit designs. Compact dimensions suitable for dense electronic assemblies. Ideal for electric vehicle charging, motor control, and power supply systems.
Provides reliable operation in automotive and industrial automation applications. Explore more semiconductor and MOSFET products from Infineon in the Electronics & Electricals category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 49 A.
It operates reliably from -55°C to +150°C, ensuring stability in various environmental conditions.
The maximum drain-source voltage is 40 V.
The on-resistance is 13.7 milliohms, which contributes to improved performance and efficiency.
The typical gate charge is 8.6 nC, allowing for fast switching capabilities.
The dimensions are 6.35 mm in length, 5.35 mm in width, and 1.1 mm in height.
It comes in an 8-pin TDSON package, suitable for surface mount technology.
The maximum power dissipation is rated at 2.5 W, which supports effective thermal management.
The gate-source voltage range extends from -20 V to +20 V, providing flexibility in circuit design.
This MOSFET is suitable for applications in power management, electric vehicle charging systems, motor drives, and power supply conversions.
The channel type is N-channel, and it operates in enhancement mode.
The country of origin for this component is India.
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