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Infineon SIPMOS Type P-Channel MOSFET, 260 mA, 250 V Enhancement Mode, 4-Pin SOT-223 BSP92PH6327XTSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.6mm |
| Length | 6.5mm |
| Model | BSP92PH6327XTSA1 |
| Width | 3.5mm |
| Mount Type | Surface |
| Series | SIPMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 260mA |
| Maximum Drain Source Voltage Vds | 250V |
| Maximum Drain Source Resistance Rds | 20Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.8W |
| Typical Gate Charge Qg @ Vgs | 4.3nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 83V |
Key Features
- This MOSFET features an enhancement mode operation for efficient switching.
- It includes a maximum power dissipation of 1.8 W suitable for low power applications.
- The device supports a wide operating temperature range from -55°C to 150°C.
- It has a maximum drain source resistance of 20 ohms ensuring low power loss.
- The package type SOT-223 allows surface mounting for compact PCB layouts.
- The MOSFET is AEC-Q101 qualified for automotive applications and RoHS compliant.
- Its typical gate charge of 4.3 nC offers fast switching performance.
- The device supports maximum gate source voltage swing from -20 V to +20 V.
Product Description
Infineon BSP92PH6327XTSA1 is a SIPMOS Type P-Channel MOSFET designed with enhancement mode operation, capable of handling a continuous drain current of 260 mA and a drain source voltage rating of 250 V. Packaged in a compact 4-Pin SOT-223 surface mount package, this MOSFET delivers efficient switching performance for various industrial and automotive applications.
The device dissipates a maximum power of 1.8 W, making it suitable for low power electronic devices and discrete semiconductor circuits. It has a low maximum drain source resistance of 20 ohms which helps minimize conduction losses during operation.
Designed with a wide operating temperature range from -55°C to 150°C, the BSP92PH6327XTSA1 MOSFET ensures reliable performance in harsh environments. The MOSFET also supports a maximum gate source voltage range from -20 V to +20 V, providing flexibility for different driving conditions.
The typical gate charge of 4.3 nC allows fast switching, improving efficiency in power management applications. Additionally, this device complies with the AEC-Q101 automotive standard, confirming its suitability for automotive use including telecom, e-mobility, notebooks, and DC/DC converter circuits.
This MOSFET features enhancement mode operation for precise control and minimal power consumption. Its ROHS-compliant lead-free plating supports environmental safety requirements. The 4-Pin SOT-223 package enables compact and convenient surface mount PCB assembly.
Its rugged automotive qualification ensures reliability in demanding industrial environments. Low gate charge facilitates fast switching and integration into efficient power conversion systems. Operation within a broad temperature range ensures stable performance under varying thermal conditions.
Compact dimensions of 6.5 mm length, 3.5 mm width, and 1.6 mm height optimize PCB space usage.
This Infineon MOSFET is an excellent choice for industries including automotive, telecommunications, consumer electronics, and power management systems. It enables efficient power switching solutions with reliable long-term performance.
Explore more MOSFETs and discrete semiconductor components at EnvMart for your industrial and commercial electronics needs.
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Frequently Asked Questions
The maximum continuous drain current for the BSP92PH6327XTSA1 is 260 mA.
This model has a maximum drain source voltage rating of 250 V.
The typical gate charge for the BSP92PH6327XTSA1 is 4.3 nC.
It is packaged in a 4-Pin SOT-223 surface mount package.
The dimensions are 6.5 mm in length, 3.5 mm in width, and 1.6 mm in height.
The operating temperature range is from -55°C to 150°C.
The maximum power dissipation is 1.8 W, making it suitable for low power applications.
It is AEC-Q101 qualified, confirming its suitability for automotive applications.
The maximum gate source voltage swing is from -20 V to +20 V.
This model features a P-Channel type.
The maximum drain source resistance is 20 ohms, which helps minimize conduction losses.
It is suitable for various industrial and automotive applications, including power management systems.
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