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Infineon ISP Type P-Channel MOSFET, Enhancement Mode, 3.9 A, 100 V, 5 W, 3-Pin SOT-223 ISP16DP10LMXTSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 5.35mm |
| Length | 6.1mm |
| Model | ISP16DP10LMXTSA1 |
| Width | 1.2mm |
| Mount Type | Surface |
| Series | ISP |
| Maximum Operating Temperature | 175°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 3.9A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 1.38Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 5W |
| Typical Gate Charge Qg @ Vgs | 11.6nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- This MOSFET features a 3-pin SOT-223 surface-mount package for compact PCB design.
- It has a maximum continuous drain current of 3.9 amperes suitable for medium load applications.
- The device supports a maximum drain-source voltage of 100 volts with a low on-resistance of 1.38 ohms.
- Its maximum power dissipation is rated at 5 watts ensuring reliability in demanding conditions.
- The MOSFET operates efficiently between -55°C and 175°C for wide temperature range applications.
- Typical gate charge of 11.6 nC enables fast switching performance for load switching and battery management.
- Designed with avalanche ruggedness for enhanced durability in industrial and automotive environments.
- The forward voltage drop is approximately 1.2 volts, lowering conduction losses.
Product Description
Infineon ISP16DP10LMXTSA1 is a P-Channel Enhancement Mode MOSFET designed to deliver reliable performance in power management, battery management, and industrial automation. Its 3-pin SOT-223 surface-mount package allows for efficient compact board layouts, making it suitable for medium power applications.
With a maximum continuous drain current of 3.9 A and a maximum drain-source voltage of 100 V, the device supports various switching loads with robust efficiency. The low on-resistance of 1.38 ohms minimizes conduction losses, improving overall system efficiency.
The MOSFET can operate safely within a temperature range of -55°C to 175°C, enabling use in harsh industrial and automotive environments. Its typical gate charge is 11.6 nC at Vgs, allowing fast switching and enhanced response times.
Additional features include avalanche ruggedness that provides protection against voltage spikes, and a maximum power dissipation rating of 5 W, ensuring stable performance under typical operating conditions.
This component is ideal for use in battery management systems, load switching circuits, reverse polarity protection, and industrial automation devices. Its design also supports an easy interface with microcontrollers and digital systems.
This MOSFET features a 3-pin SOT-223 surface-mount package. Maximum drain current is 3.9 A for medium power applications. Maximum drain-source voltage rating is 100 V with low on-resistance. Power dissipation rated at 5 W for robust thermal performance.
Operating temperature range from -55°C to 175°C. Typical gate charge of 11.6 nC supports fast switching. Avalanche ruggedness enhances durability and reliability. Forward voltage drop is approximately 1.2 V to reduce losses.
Ideal for battery management and industrial automation applications. Explore more Infineon MOSFETs and discrete semiconductor components at EnvMart for reliable power management and switching solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 3.9 amperes, making it suitable for medium load applications.
This MOSFET has a maximum drain-source voltage rating of 100 volts.
The maximum power dissipation for this model is rated at 5 watts, ensuring reliable performance in various applications.
It operates efficiently within a temperature range of -55°C to 175°C, suitable for harsh environments.
The typical gate charge at Vgs is 11.6 nC, which supports fast switching performance.
The MOSFET features a low on-resistance of 1.38 ohms, which helps minimize conduction losses.
It comes in a 3-pin SOT-223 surface-mount package, allowing for compact PCB designs.
The forward voltage drop is approximately 1.2 volts, which reduces conduction losses.
This model features a P-Channel type, designed for enhancement mode operation.
The maximum gate-source voltage for this MOSFET is 20 volts.
It is suitable for applications such as battery management systems, load switching circuits, and industrial automation devices.
The height of this MOSFET is 5.35 mm and the width is 1.2 mm.
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