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Infineon ISC N-Channel MOSFET 31 A 100 V 8-Pin TDSON ISC230N10NM6ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 5.35mm |
| Length | 6.1mm |
| Model | ISC230N10NM6ATMA1 |
| Width | 1.2mm |
| Mount Type | Surface |
| Series | ISC |
| Maximum Operating Temperature | 175°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 31A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 8.05mΩ |
| Maximum Power Dissipation Pd | 100W |
| Typical Gate Charge Qg @ Vgs | 24nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Supports a maximum continuous drain current of 31 A for high-load applications.
- Maximum drain to source voltage rating is 100 V suitable for medium-voltage switching circuits.
- Low on-resistance of 8.05 milliohms minimizes conduction losses under heavy current conditions.
- Maximum power dissipation capability of 100 W allows sustained operation at high thermal loads.
- Gate charge of 24 nC enables fast switching for high-speed electronic designs.
- Operating temperature range extends from -55°C to 175°C ensuring reliability in harsh environments.
- Surface mount TDSON 8-pin package supports compact PCB layouts and efficient thermal management.
- Forward voltage drop is 1 V ensuring efficient conduction during operation.
Product Description
Infineon ISC230N10NM6ATMA1 is a compact N-Channel MOSFET designed for surface-mounted power electronics applications requiring high current and thermal resilience. This device supports a maximum continuous drain current of 31 A and a drain to source voltage of 100 V, making it suitable for medium-voltage switching topologies.
The low on-resistance rating of 8.05 milliohms reduces conduction losses, enhancing efficiency in power management circuits. With a maximum power dissipation of 100 W, it can sustain heavy thermal loads encountered in demanding industrial environments.
Featuring a gate charge of 24 nC at Vgs, it enables faster switching speeds, ideal for high-performance motor drivers and DC-DC converter stages. The operating temperature range of -55°C to 175°C ensures stable operation across a wide range of ambient conditions, meeting rigorous industrial and automotive requirements.
The device adopts an 8-pin TDSON surface mount package with dimensions of 6.1 mm in length, 1.2 mm in width, and 5.35 mm in height, supporting space-constrained PCB designs with enhanced thermal dissipation paths.
High continuous drain current rating of 31 A supports diverse power applications. Robust 100 V drain-source voltage for medium-voltage circuits. Efficient low on-state resistance of 8.05 mΩ to minimize losses. Compact TDSON 8-pin surface mount package for optimal board layout.
Wide temperature range from -55°C to 175°C for enhanced reliability. Maximum power dissipation of 100 W suitable for sustained high-power use. Fast switching enabled by a 24 nC gate charge at Vgs. Forward voltage drop of 1 V to ensure power efficiency.
This Infineon ISC MOSFET is ideal for power supply circuits, DC-DC converters, motor driver half-bridges, battery management, and other applications necessitating reliable, high-efficiency low-voltage switching elements.
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Frequently Asked Questions
The Infineon ISC230N10NM6ATMA1 supports a maximum continuous drain current of 31 A, suitable for high-load applications.
This model has a maximum drain to source voltage rating of 100 V, making it suitable for medium-voltage switching circuits.
It features a low on-resistance of 8.05 milliohms, which minimizes conduction losses under heavy current conditions.
The maximum power dissipation capability of this unit is 100 W, allowing for sustained operation at high thermal loads.
The operating temperature range extends from -55°C to 175°C, ensuring reliability in harsh environments.
It has a gate charge of 24 nC, enabling fast switching for high-speed electronic designs.
The TDSON 8-pin package has dimensions of 6.1 mm in length, 1.2 mm in width, and 5.35 mm in height.
The forward voltage drop is 1 V, ensuring efficient conduction during operation.
This model adopts a surface mount type, which supports compact PCB layouts and efficient thermal management.
It is suitable for power supply circuits, DC-DC converters, motor driver half-bridges, and battery management applications.
The maximum gate-source voltage is 20 V, providing flexibility in various circuit designs.
This MOSFET features an 8-pin configuration, allowing for efficient connections in electronic circuits.
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