Infineon ISP Type P-Channel MOSFET, 3.9 A, 100 V Enhancement Mode, 3-Pin SOT-223 ISP16DP10LMXTSA1

Infineon ISP16DP10LMXTSA1 is a high-quality P-Channel MOSFET with maximum continuous drain current of 3.9 A and maximum drain-source voltage of 100 V. It operates in enhancement mode and is housed in a compact 3-pin SOT-223 surface-mount package. This MOSFET is designed primarily for battery management, load switching, and reverse polarity protection applications, offering an efficient and simplified design for medium and low power circuits.

The device features a low RDS(on) value of 1.38 ohms, which improves efficiency especially at low load conditions. It has excellent avalanche ruggedness, ensuring robust and reliable operation in demanding industrial environments. With a maximum power dissipation of 5 W, it maintains performance under thermal stress, further supported by an operating temperature range from -55°C to 175°C.

The typical gate charge of 11.6 nC at the specified gate-source voltage enables fast switching speeds, facilitating better control in switching applications. Additionally, the MOSFET tolerates a maximum gate-source voltage of 20 V, providing safe and stable gate operation. The forward voltage is approximately 1.2 V, which contributes to predictable conduction behavior.

This MOSFET is commonly applied in industrial automation systems and battery management, where compactness, reliability, and performance are critical. Its industry-standard SOT-223 package allows for simple PCB integration and mounting. The device’s robust characteristics and proven technology of Infineon ensure long-term operation and supply security.

Designed for versatile power switching and battery management applications. Compact 3-pin SOT-223 surface mount package for efficient PCB integration. Wide operating temperature range supports diverse industrial environments.

Low on-resistance reduces power losses and enhances energy efficiency. Robust avalanche ruggedness for protection against voltage spikes. Fast switching capability allows for improved system responsiveness. Typical gate charge ensures low switching losses and high efficiency.

Forward voltage and gate voltage limits ensure safe operating conditions. Explore the Infineon MOSFET category on EnvMart for more semiconductor solutions suited for industrial, electronic, and automation applications.